The invention discloses a
perovskite thin film photoelectric
detector based on a molecular surface
treatment strategy, and relates to the technical field of
semiconductor thin film materials and photoelectric detectors thereof. According to the
perovskite thin film photoelectric
detector based on the molecular surface
treatment strategy, the performance of the photoelectric
detector is optimized through combination of the molecular surface
treatment strategy and a quasi-two-dimensional DJ type
perovskite material, and the perovskite thin film photoelectric detector has the
advantage of high sensitivity, still has stable response in a weak light environment, is high in response speed, can adapt to a high-frequency optical
signal scene and can
resist influences of illumination, high temperature and
humidity; the material has the advantages of low cost, low performance attenuation after long-term storage and repeated bending, good stability,
adaptation to a complex use environment, no need of a special environment in the preparation process, reduction of the production threshold, flexibility and self-driving characteristics, and can be expanded to the fields of wearable equipment and weak
light sensing. The problem that performance and stability of an existing perovskite detector are difficult to consider at the same time is effectively solved, and a foundation is laid for practicability of flexible photoelectric devices.