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396 results about "Optical transistor" patented technology

An optical transistor, also known as an optical switch or a light valve, is a device that switches or amplifies optical signals. Light occurring on an optical transistor’s input changes the intensity of light emitted from the transistor’s output while output power is supplied by an additional optical source. Since the input signal intensity may be weaker than that of the source, an optical transistor amplifies the optical signal. The device is the optical analog of the electronic transistor that forms the basis of modern electronic devices. Optical transistors provide a means to control light using only light and has applications in optical computing and fiber-optic communication networks. Such technology has the potential to exceed the speed of electronics, while saving more power.

Light responsive semiconductor switch with shorted load protection

An improved light responsive semiconductor switch with shorted load protection capable of successfully interrupting a load overcurrent. The switch is includes an output transistor which is triggered by a photovoltaic element to connect a load to a power source thereof, and an overcurrent sensor which provides an overcurrent signal upon seeing an overcurrent condition in the load. A shunt transistor is connected in series with a current limiting resistive element across the photovoltaic element to define a shunt path of flowing the current from the photovoltaic element through the current limiting resistive element away from the output transistor. A latch circuit is included to be energized by the photovoltaic element and to provide an interruption signal once the overcurrent signal is received and hold the interruption signal. The interruption signal turns on the shunt transistor so as to flow the current from the photovoltaic element through the shunt path, thereby turning off the output transistor for interruption of the overcurrent. The current limiting resistive element is connected in series with the shunt transistor to limit the current from the photovoltaic element when the shunt transistor is turned on, thereby providing a supply voltage from the photovoltaic element to the latch circuit. Thus, the latch circuit is enabled to keep providing the interruption signal for reliable interruption of the overcurrent.
Owner:MATSUSHITA ELECTRIC WORKS LTD

Output buffer with programmable voltage swing

An integrated circuit device in which the magnitude of the output voltage swings of outputs in a circuit having emitter coupled output transistors is programmable includes a variable bias generator that produces a bias voltage. The bias voltage is connected to the base of a current source transistor in order to program the magnitude of the output voltage swings. An electrical connection area of the integrated circuit device is connected to the bias voltage generator. An external programming circuit can be connected to the electrical connection area in order to set the bias voltage, to thereby program the desired magnitude of the output voltage swings. The external programming circuit typically can be a resistance or an external voltage source. The variable bias generator can be any of a number of circuits that produce a bias voltage that is dependent upon the external programming circuit connected to the electrical connection area, and that produce a default bias voltage if no external programming circuit is connected to the electrical connection area. Another aspect of the invention is a method for programming the magnitude of the output voltage swings in an integrated circuit device having emitter coupled output transistors. The invention provides the ability to program the magnitude of the output voltage swings of the outputs to increase the magnitude of the output voltage swings, or alternatively, to decrease the magnitude of the output voltage swings thereby advantageously saving power and preventing unnecessary heat generation.
Owner:QUALCOMM INC

Resistive memory device having vertical transistors and method for making the same

The present invention relates to resistive memory devices incorporating therein vertical selection transistors and methods for making the same. A resistive memory device comprises a semiconductor substrate having a first type conductivity; a plurality of vertical selection transistors formed on the semiconductor substrate in an array, each of the plurality of vertical selection transistors including a semiconductor pillar protruded from the semiconductor substrate, top region of the semiconductor pillar having a second type conductivity opposite to the first type conductivity provided in the semiconductor substrate; and a gate electrode surrounding the semiconductor pillar with a gate dielectric layer interposed therebetween, the gate electrode being lower in height than the semiconductor pillar; a plurality of contact studs disposed on top of the vertical selection transistors; a plurality of resistive memory elements disposed on top of the contact studs; a plurality of parallel word lines connecting the vertical selection transistors by way of respective gate electrodes, the parallel word lines extending along a first direction; a plurality of parallel bit lines connecting the resistive memory elements, the parallel bit lines extending along a second direction different from the first direction provided in the parallel word lines; and a plurality of parallel source lines with the second type conductivity formed in top regions of the semiconductor substrate in between rows of the semiconductor pillars, wherein the source lines and the top regions of the semiconductor pillars function as source and drain, respectively.
Owner:AVALANCHE TECH
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