401 results about "Optical transistor" patented technology

Disclosed is an output overvoltage protection circuit for a power amplifier having a plurality of stages, which comprises a monitor circuit for monitoring an output overvoltage of an output transistor in the final stage of the power amplifier and allowing a current to flow therethrough in response to the monitored output overvoltage, and a current mirror circuit for supplying a current proportional to the current from the monitor circuit in such a manner that the base bias of the first-stage transistor of the power amplifier is reduced in response to the current supplied from the current mirror circuit, to reduce the output of the final-stage output transistor.

The present invention provides a voltage regulator capable of causing a large output current to flow during a heavy load operation, and of making a leakage current from output transistors small during a light load operation. The voltage regulator includes a plurality of output transistors and a circuit for changing connection of the output transistors to allow a W / L value of the output transistor to be changed. Moreover, the voltage regulator further includes an output current detection circuit for detecting an output current, and a circuit for changing connection of the output transistors based on the output current to allow a W / L value of the output transistors to be changed based on the output current.

A power amplifier includes an input circuit, three power supply lines with voltages successively decreasing in an order of first, second and third power supply lines, a push-side driving circuit and a pull-side driving circuit which receive control signals from the input circuit, three driving signal lines which are led out of the driving circuits, three output transistors which have current paths connected at one ends to the first, second and third power supply lines, and have gates connected to the three driving signal lines, respectively, an output terminal which is commonly connected to the other ends of the current paths of the output transistors, an impedance circuit which adjusts a gate impedance of the output transistor connected to the third power supply line, and a feedback circuit connected between the output terminal and the input circuit.

A differential low noise amplifier (LNA) involves two main amplifying transistors biased in saturation, and two cancel transistors biased in sub-threshold. In one example, the gates of the cancel transistors are coupled to the drains of main transistors, in a symmetrical and cross-coupled fashion. The main transistors are source degenerated. Because the gates of cancel transistors are not coupled to the differential input leads of the LNA, the input capacitance of the LNA is reduced. Noise introduced into the LNA output due to the cancel transistors being biased in the sub-threshold region is reduced because there are two stages. The first stage involves the main transistors, and the second stage involves the cancel transistors. By increasing the gain of the first stage and decreasing the gain of the second stage, overall LNA gain is maintained while reducing the noise that the sub-threshold biased transistors contribute to the LNA output.

A level shift circuit has a driving circuit and an output circuit. The driving circuit has a clamp circuit for receiving first and second bias potentials, outputting first and second drive signals which are not less than a reference potential, less than the first bias potential, and complementary to each other, and also outputting third and fourth drive signals which are higher than the second bias potential, not more than a power source potential, and complementary to each other. The output circuit has a first output transistor of a first conductivity type and a second output transistor of a second conductivity type which are connected in series to each other. The first output transistor has a gate for receiving the first drive signal and one electrode for receiving the reference potential. The second output transistor has a gate for receiving the third drive signal and one electrode for receiving the power source potential.

According to one exemplary embodiment, a power supply rejection bias circuit includes a first amplifier coupled to a second amplifier, where the first amplifier receives a reference voltage, and a feedback voltage of the bias circuit. The bias circuit further includes an output transistor driven by the output of the second amplifier, where the output transistor provides the output of the bias circuit and the feedback voltage. The bias circuit further includes a feedback resistor coupled between an input and an output of the second amplifier. According to this embodiment, the output of the second amplifier forms a non-dominant pole of the bias circuit and the output of the bias circuit forms a dominant pole of the bias circuit, thereby increasing power supply rejection of the bias circuit.

The present invention relates to resistive memory devices incorporating therein vertical selection transistors and methods for making the same. A resistive memory device comprises a semiconductor substrate having a first type conductivity; a plurality of vertical selection transistors formed on the semiconductor substrate in an array, each of the plurality of vertical selection transistors including a semiconductor pillar protruded from the semiconductor substrate, top region of the semiconductor pillar having a second type conductivity opposite to the first type conductivity provided in the semiconductor substrate; and a gate electrode surrounding the semiconductor pillar with a gate dielectric layer interposed therebetween, the gate electrode being lower in height than the semiconductor pillar; a plurality of contact studs disposed on top of the vertical selection transistors; a plurality of resistive memory elements disposed on top of the contact studs; a plurality of parallel word lines connecting the vertical selection transistors by way of respective gate electrodes, the parallel word lines extending along a first direction; a plurality of parallel bit lines connecting the resistive memory elements, the parallel bit lines extending along a second direction different from the first direction provided in the parallel word lines; and a plurality of parallel source lines with the second type conductivity formed in top regions of the semiconductor substrate in between rows of the semiconductor pillars, wherein the source lines and the top regions of the semiconductor pillars function as source and drain, respectively.