10 results about "Kinetic inductance" patented technology

A superconducting device is described wherein the device comprises a substrate; a capacitor structure (604) and a superconducting inductor structure (602) disposed on the substrate, the capacitor structure an the superconducting inductor structure forming a superconducting microwave filter structure, in particular a low-pass filter, the superconducting inductor structure including a plurality of nanowires of a superconducting material, each of the plurality of nanowires being galvanically connected to one of a plurality of capacitor electrodes (608) forming the capacitor structure, wherein the cross-sectional dimensions of the plurality of nanowires are selected such that the kinetic inductance of each of the one or more nanowires is larger, preferably substantially larger, than the geometrical inductance of the nanowire.

Disclosed in the present invention is a terahertz kinetic inductance bolometer, including a superconducting thin film layer, a terahertz antenna, a cutoff layer and a Si substrate, wherein the superconducting thin film layer and the terahertz antenna are respectively deposited on the cutoff layer, and the cutoff layer is deposited on the Si substrate; the superconducting thin film layer includes a superconducting feeder line, an inter-digital capacitor and an inductor coil; the inter-digital capacitor is connected with the inductor coil in parallel to form an oscillation circuit; the terahertz antenna is adjacent to the inductor coil and is used to convert a received terahertz signal into heat so that the inductor coil produces an inductance change; a resonance frequency in the inter-digital capacitor changes through the inductance change; and the superconducting feeder line receives the varying resonance frequency, through which an light intensity of the terahertz signal can be obtained to complete the detection of the terahertz signal. The terahertz kinetic inductance bolometer can detect the terahertz signal accurately and is less affected by the temperature. The present invention also provides a preparation method of the terahertz kinetic inductance bolometer and a terahertz detection system.

A circuit device includes a semiconductor device and an impedance matching network. The impedance matching network includes a superconductor material forming at least one inductor of the circuit device, and the superconductor material exhibits a kinetic inductance per unit square when in a superconducting state. The impedance matching network is configured to transform an impedance of the semiconductor device to match a predetermined second impedance during operation of the circuit device.

A device includes: a substrate; a first superconductor layer on the substrate, the first superconductor layer having a first kinetic inductance; and a second superconductor layer on the first superconductor layer, the second superconductor layer having a second kinetic inductance that is lower than the first kinetic inductance, in which the second superconductor layer covers the first superconductor layer such that the second superconductor layer and the first superconductor layer have a same footprint, with the exception of at least a first region where the second superconductor layer is omitted so that the first superconductor layer and the second superconductor layer form a circuit element having a predetermined circuit parameter.

A traveling wave kinetic inductance parametric amplifier is presented. The amplifier includes a microstrip structure defining a parallel plate capacitor element formed by first and second electrically conductive layers spaced by a dielectric spacer layer. The first electrically conductive layer is made of superconducting material composition having desirably high kinetic inductance and being configured as a nanoscale thickness strip.

The invention relates to a method for determining the temperature in the environment of an assembly comprising at least one passive component (6), the passive component being integrated into a single-layer or multi-layer assembly (22), comprising the steps of: - determining the geometric inductance of the passive component (6), from the dimensions of the passive component (6); - measuring the inductance of the passive component (6), called the total inductance, the passive component (6) being used in a temperature range such that it is in a superconducting state; - determining the kinetic inductance of the passive component (6), from the total inductance and the geometric inductance; - determining the temperature from the kinetic inductance of the component. Figure for the abstract: Fig. 2

Superconducting integrated circuits and methods of forming these circuits are discussed. One superconducting integrated circuit has a substrate and a control device formed by a layer of high kinetic inductance material overlying the substrate. The control device has a loop of material, electrical connections between the loop of material and a power line, a coupling element connected to the loop of material, a pair of Josephson junctions that interrupt the loop of material, and an energy storage element connected to the loop of material. An alternative superconducting integrated circuit has a kinetic inductance device formed in a high kinetic inductance layer. The device has a compound Josephson junction structure with two parallel current paths with respective Josephson junctions, a loop of material connected to the compound Josephson junction structure, and a coupling structure. The circuit also has an additional device that couples to the coupling structure.

The invention relates to a method for determining the temperature in the environment of an assembly comprising at least one passive component (6), the passive component being integrated into a single-layer or multi-layer assembly (22), comprising the steps of: - determining the geometric inductance of the passive component (6), from the dimensions of the passive component (6); - measuring the inductance of the passive component (6), called the total inductance, the passive component (6) being used in a temperature range such that it is in a superconducting state; - determining the kinetic inductance of the passive component (6), from the total inductance and the geometric inductance; - determining the temperature from the kinetic inductance of the component. Figure for the abstract: Fig. 2

A photonic integrated circuit and method. A waveguide is configured to propagate one or more photons. A photon-sensitive portion of a superconducting wire proximate to the waveguide is configured to transition from a superconducting state to a non-superconducting state in response to detection of a. photon within the waveguide. A low resistance metal structure is connected to a first lead and a second lead, the first lead being connected to one end of the photon-sensitive portion and the second lead being connected to another end of the photon-sensitive portion. The low resistance metal structure is separated from the waveguide to create a gap between a portion of the low resistance metal structure and the photon-sensitive portion. A resistor is connected between the first lead, and a middle section of the low resistance metal structure such that current through the resistor causes a short circuit to bypass the photon-sensitive portion.

A method for determining temperature in the environment of an assembly includes at least one passive component, the passive component being integrated into a monolayer or multilayer assembly, including the following steps: determining the geometric inductance of the passive component, based on the dimensions of the passive component; measuring the inductance of the passive component, referred to as total inductance, the passive component being used in a temperature range such that it is in a superconducting state; determining the kinetic inductance of the passive component, based on the total inductance and the geometric inductance; determining the temperature based on the kinetic inductance of the component.