18 results about "Kinetic inductance" patented technology

Disclosed in the present invention is a terahertz kinetic inductance bolometer, including a superconducting thin film layer, a terahertz antenna, a cutoff layer and a Si substrate, wherein the superconducting thin film layer and the terahertz antenna are respectively deposited on the cutoff layer, and the cutoff layer is deposited on the Si substrate; the superconducting thin film layer includes a superconducting feeder line, an inter-digital capacitor and an inductor coil; the inter-digital capacitor is connected with the inductor coil in parallel to form an oscillation circuit; the terahertz antenna is adjacent to the inductor coil and is used to convert a received terahertz signal into heat so that the inductor coil produces an inductance change; a resonance frequency in the inter-digital capacitor changes through the inductance change; and the superconducting feeder line receives the varying resonance frequency, through which an light intensity of the terahertz signal can be obtained to complete the detection of the terahertz signal. The terahertz kinetic inductance bolometer can detect the terahertz signal accurately and is less affected by the temperature. The present invention also provides a preparation method of the terahertz kinetic inductance bolometer and a terahertz detection system.

A circuit can include a galvanic coupling of a coupler to a qubit by a segment of kinetic inductance material. The circuit can include a galvanic kinetic inductance coupler having multiple windings. The circuit can include a partially-galvanic coupler having multiple windings. The partially-galvanic coupler can include a magnetic coupling and a galvanic coupling. The circuit can include an asymmetric partially-galvanic coupler having a galvanic coupling and a first magnetic coupling to one qubit and a second magnetic coupling to a second qubit. The circuit can include a compact kinetic inductance qubit having a qubit body loop comprising a kinetic inductance material. A multilayer integrated circuit including a kinetic inductance layer can form a galvanic kinetic inductance coupling. A multilayer integrated circuit including a kinetic inductance layer can form at least a portion of a compact kinetic inductance qubit body loop.

A superconducting device is described wherein the device comprises a substrate; a capacitor structure (604) and a superconducting inductor structure (602) disposed on the substrate, the capacitor structure an the superconducting inductor structure forming a superconducting microwave filter structure, in particular a low-pass filter, the superconducting inductor structure including a plurality of nanowires of a superconducting material, each of the plurality of nanowires being galvanically connected to one of a plurality of capacitor electrodes (608) forming the capacitor structure, wherein the cross-sectional dimensions of the plurality of nanowires are selected such that the kinetic inductance of each of the one or more nanowires is larger, preferably substantially larger, than the geometrical inductance of the nanowire.

Disclosed in the present invention is a terahertz kinetic inductance bolometer, including a superconducting thin film layer, a terahertz antenna, a cutoff layer and a Si substrate, wherein the superconducting thin film layer and the terahertz antenna are respectively deposited on the cutoff layer, and the cutoff layer is deposited on the Si substrate; the superconducting thin film layer includes a superconducting feeder line, an inter-digital capacitor and an inductor coil; the inter-digital capacitor is connected with the inductor coil in parallel to form an oscillation circuit; the terahertz antenna is adjacent to the inductor coil and is used to convert a received terahertz signal into heat so that the inductor coil produces an inductance change; a resonance frequency in the inter-digital capacitor changes through the inductance change; and the superconducting feeder line receives the varying resonance frequency, through which an light intensity of the terahertz signal can be obtained to complete the detection of the terahertz signal. The terahertz kinetic inductance bolometer can detect the terahertz signal accurately and is less affected by the temperature. The present invention also provides a preparation method of the terahertz kinetic inductance bolometer and a terahertz detection system.

A circuit device includes a semiconductor device and an impedance matching network. The impedance matching network includes a superconductor material forming at least one inductor of the circuit device, and the superconductor material exhibits a kinetic inductance per unit square when in a superconducting state. The impedance matching network is configured to transform an impedance of the semiconductor device to match a predetermined second impedance during operation of the circuit device.

Techniques for designing, generating, and utilizing current-biased tunable qubits are presented. The qubit device can include a first Josephson junction (JJ) positioned along a first current path of the device, and a second JJ and a third JJ coupled in series along a second current path parallel to the first current path, wherein the second and third JJs facilitate controlling the frequency of the device. The first JJ can be larger in area than each of the second and third JJs, wherein the current split ratio between the first and second current paths can thereby be increased. The device can include a capacitor having a first terminal associated with the second and third JJs and a second terminal associated with ground. Alternatively, a high-kinetic inductance line can be used in the first current path instead of the JJ.

A device includes: a substrate; a first superconductor layer on the substrate, the first superconductor layer having a first kinetic inductance; and a second superconductor layer on the first superconductor layer, the second superconductor layer having a second kinetic inductance that is lower than the first kinetic inductance, in which the second superconductor layer covers the first superconductor layer such that the second superconductor layer and the first superconductor layer have a same footprint, with the exception of at least a first region where the second superconductor layer is omitted so that the first superconductor layer and the second superconductor layer form a circuit element having a predetermined circuit parameter.

A traveling wave kinetic inductance parametric amplifier is presented. The amplifier includes a microstrip structure defining a parallel plate capacitor element formed by first and second electrically conductive layers spaced by a dielectric spacer layer. The first electrically conductive layer is made of superconducting material composition having desirably high kinetic inductance and being configured as a nanoscale thickness strip.

The invention relates to a method for determining the temperature in the environment of an assembly comprising at least one passive component (6), the passive component being integrated into a single-layer or multi-layer assembly (22), comprising the steps of: - determining the geometric inductance of the passive component (6), from the dimensions of the passive component (6); - measuring the inductance of the passive component (6), called the total inductance, the passive component (6) being used in a temperature range such that it is in a superconducting state; - determining the kinetic inductance of the passive component (6), from the total inductance and the geometric inductance; - determining the temperature from the kinetic inductance of the component. Figure for the abstract: Fig. 2

There is provided reduced effect of effect of variations in kinetic inductance to a relative frequency. A quantum circuit comprises multi-resonator structures configured to couple qubits to a common feed line, wherein each of the multi-resonator structures comprises a readout resonator and a Purcell-filter resonator, and the readout resonator and the Purcell-filter resonator are configured to have matching inductive contributions to a resonator impedance.

A single photon detector based on the kinetic inductance of two-dimensional Van der Waals materials. In some embodiments, a system including such a detector includes: a resonator including a conductive path through a superconducting sheet, the superconducting sheet being composed of a Van der Waals material, the superconducting sheet being configured to absorb a photon, and in response to the absorption of the photon, to exhibit an increase in a kinetic inductance of the conductive path.

Superconducting integrated circuits and methods of forming these circuits are discussed. One superconducting integrated circuit has a substrate and a control device formed by a layer of high kinetic inductance material overlying the substrate. The control device has a loop of material, electrical connections between the loop of material and a power line, a coupling element connected to the loop of material, a pair of Josephson junctions that interrupt the loop of material, and an energy storage element connected to the loop of material. An alternative superconducting integrated circuit has a kinetic inductance device formed in a high kinetic inductance layer. The device has a compound Josephson junction structure with two parallel current paths with respective Josephson junctions, a loop of material connected to the compound Josephson junction structure, and a coupling structure. The circuit also has an additional device that couples to the coupling structure.

The invention relates to a method for determining the temperature in the environment of an assembly comprising at least one passive component (6), the passive component being integrated into a single-layer or multi-layer assembly (22), comprising the steps of: - determining the geometric inductance of the passive component (6), from the dimensions of the passive component (6); - measuring the inductance of the passive component (6), called the total inductance, the passive component (6) being used in a temperature range such that it is in a superconducting state; - determining the kinetic inductance of the passive component (6), from the total inductance and the geometric inductance; - determining the temperature from the kinetic inductance of the component. Figure for the abstract: Fig. 2

Superconducting integrated circuits and methods of forming these circuits are discussed. One superconducting integrated circuit has a substrate and a control device formed by a layer of high kinetic inductance material overlying the substrate. The control device has a loop of material, electrical connections between the loop of material and a power line, a coupling element connected to the loop of material, a pair of Josephson junctions that interrupt the loop of material, and an energy storage element connected to the loop of material. An alternative superconducting integrated circuit has a kinetic inductance device formed in a high kinetic inductance layer. The device has a compound Josephson junction structure with two parallel current paths with respective Josephson junctions, a loop of material connected to the compound Josephson junction structure, and a coupling structure. The circuit also has an additional device that couples to the coupling structure.

A photonic integrated circuit and method. A waveguide is configured to propagate one or more photons. A photon-sensitive portion of a superconducting wire proximate to the waveguide is configured to transition from a superconducting state to a non-superconducting state in response to detection of a. photon within the waveguide. A low resistance metal structure is connected to a first lead and a second lead, the first lead being connected to one end of the photon-sensitive portion and the second lead being connected to another end of the photon-sensitive portion. The low resistance metal structure is separated from the waveguide to create a gap between a portion of the low resistance metal structure and the photon-sensitive portion. A resistor is connected between the first lead, and a middle section of the low resistance metal structure such that current through the resistor causes a short circuit to bypass the photon-sensitive portion.

A nonlinear parametric device includes a planar substrate and a millimeter-wave resonator formed from superconductive material deposited on the planar substrate. When the resonator is cooled below a critical temperature, it exhibits nonlinear kinetic inductance that may be used to implement millimeter-wave nonlinear frequency generation and parametric amplification. Millimeter waves may be coupled into, and out of, the nonlinear parametric device with hollow rectangular electromagnetic waveguides. Niobium nitride is an excellent superconductive material for kinetic inductance due to its high intrinsic sheet inductance, a critical temperature that is higher than many other superconductive materials, and relatively low loss at millimeter-wave frequencies.

A superconducting circuit and method of fabrication can include at least a portion of a superconducting qubit having high-coherence, low-noise, low susceptibility, which is integrable with other structures and devices of a quantum processor. The superconducting circuit can include: a kinetic inductance layer directly overlying a substrate; a first dielectric layer overlying the kinetic inductance layer; and, a superconductive wiring layer overlying the first dielectric layer. The kinetic inductance layer includes a first qubit conductor of a superconducting qubit loop comprising a superconductive material having a relatively high inductance value, and the superconductive wiring layer includes at least a second qubit conductor to complete the loop, which comprises a superconductive material having a relatively low inductance value. Additional layers can be included to provide: shield structures; a return path between the second and first qubit conductors; galvanic coupling connection interfaces; and, flux bias interfaces with conductors on different layers.

A method for determining temperature in the environment of an assembly includes at least one passive component, the passive component being integrated into a monolayer or multilayer assembly, including the following steps: determining the geometric inductance of the passive component, based on the dimensions of the passive component; measuring the inductance of the passive component, referred to as total inductance, the passive component being used in a temperature range such that it is in a superconducting state; determining the kinetic inductance of the passive component, based on the total inductance and the geometric inductance; determining the temperature based on the kinetic inductance of the component.