5 results about "Kinetic inductance" patented technology

A superconducting device is described wherein the device comprises a substrate; a capacitor structure (604) and a superconducting inductor structure (602) disposed on the substrate, the capacitor structure an the superconducting inductor structure forming a superconducting microwave filter structure, in particular a low-pass filter, the superconducting inductor structure including a plurality of nanowires of a superconducting material, each of the plurality of nanowires being galvanically connected to one of a plurality of capacitor electrodes (608) forming the capacitor structure, wherein the cross-sectional dimensions of the plurality of nanowires are selected such that the kinetic inductance of each of the one or more nanowires is larger, preferably substantially larger, than the geometrical inductance of the nanowire.

A circuit device includes a semiconductor device and an impedance matching network. The impedance matching network includes a superconductor material forming at least one inductor of the circuit device, and the superconductor material exhibits a kinetic inductance per unit square when in a superconducting state. The impedance matching network is configured to transform an impedance of the semiconductor device to match a predetermined second impedance during operation of the circuit device.

A device includes: a substrate; a first superconductor layer on the substrate, the first superconductor layer having a first kinetic inductance; and a second superconductor layer on the first superconductor layer, the second superconductor layer having a second kinetic inductance that is lower than the first kinetic inductance, in which the second superconductor layer covers the first superconductor layer such that the second superconductor layer and the first superconductor layer have a same footprint, with the exception of at least a first region where the second superconductor layer is omitted so that the first superconductor layer and the second superconductor layer form a circuit element having a predetermined circuit parameter.

The invention relates to a method for determining the temperature in the environment of an assembly comprising at least one passive component (6), the passive component being integrated into a single-layer or multi-layer assembly (22), comprising the steps of: - determining the geometric inductance of the passive component (6), from the dimensions of the passive component (6); - measuring the inductance of the passive component (6), called the total inductance, the passive component (6) being used in a temperature range such that it is in a superconducting state; - determining the kinetic inductance of the passive component (6), from the total inductance and the geometric inductance; - determining the temperature from the kinetic inductance of the component. Figure for the abstract: Fig. 2

A photonic integrated circuit and method. A waveguide is configured to propagate one or more photons. A photon-sensitive portion of a superconducting wire proximate to the waveguide is configured to transition from a superconducting state to a non-superconducting state in response to detection of a. photon within the waveguide. A low resistance metal structure is connected to a first lead and a second lead, the first lead being connected to one end of the photon-sensitive portion and the second lead being connected to another end of the photon-sensitive portion. The low resistance metal structure is separated from the waveguide to create a gap between a portion of the low resistance metal structure and the photon-sensitive portion. A resistor is connected between the first lead, and a middle section of the low resistance metal structure such that current through the resistor causes a short circuit to bypass the photon-sensitive portion.