The invention discloses an MEMS three-axis thermal
convection acceleration sensor based on a TGV structure. The sensor adopts a three-layer stacked structure and comprises a first
chip, a second
chip and a middle layer which are provided with upper and lower glass substrates, and a closed fluid cavity is defined by the first
chip, the second chip and the middle layer. TGV conductive through columns are arranged in the first chip and the second chip, and heaters, z-axis temperature detectors close to the heaters and
peripheral plane temperature detectors are symmetrically arranged on the surfaces, close to the fluid cavity, of the first chip and the second chip. The low
thermal conductivity characteristic of the glass substrate is utilized, high sensitivity can be achieved without deep
silicon etching, and the
mechanical reliability and
impact resistance of the device are remarkably improved; meanwhile, the measurement of the x-axis acceleration, the y-axis acceleration and the z-axis acceleration is successfully realized through the unique
layout of the up-down symmetrical temperature detectors and the corresponding
differential measurement principle. In addition, the vertical
interconnection realized by using the TGV technology is beneficial to
miniaturization and high-density integration of the device.