62results about How to "Precise angle control" patented technology

The invention relates to a three-freedom-degree constant speed decoupling space robot active spherical wrist and a universal compliant control method. The offset mode that the included angles are formed among rotation plane normal and rotating shafts is adopted for both an upper hemisphere rotating body and a lower hemisphere rotating body. The intersection point of the two rotating shafts of the upper rotating body and the lower rotating body is the sphere center of hemispheres of the upper rotating body and the lower rotating body, the intersection point of the two rotating shafts coincides with the rotating center of an inner ball cage universal joint and the rotating center of an outer ball cage universal joint respectively, and then constant speed decoupling of three input movements is achieved; the output end of the outer ball cage universal joint is connected with a shaft neck of the upper rotating body through a bearing in a suspension mode, three absolute corner coded discs are connected with the upper rotating body, the lower rotating body, a motor conducting spinning motion, and the output end of a speed reducing system respectively, a six-dimensional ATI sensor is installed at the output tail end of the wrist, and a wrist universal compliant follow-up control mode is achieved by a rotating joint of an upper hemisphere, a rotating joint of a lower hemisphere and a joint conducting spinning motion through a system friction force compensation technology. The three-freedom-degree constant speed decoupling space robot active spherical wrist and the universal compliant control method are accurate in locating, stable in movement, and capable of avoiding oscillation phenomena of movement coupling and mechanical arms and effectively relieving mechanical interference in a spherical wrist full compliant mode.

The invention discloses a device used for controlling an angle of hole drilling. The device comprises a triangle supporting frame and an angle adjustor; the angle adjustor comprises an angle scale, anangle rod, locating rings, locating rods and a leveling disc. All the locating rods are vertically placed, the bottom parts of the locating rods are installed on a horizontal rod, and the angle scaleis installed on the end part of the horizontal rod; the horizontal rod is vertically connected with the leveling disc; the top part of the triangle supporting frame is connected with the leveling disc arranged on the bottom part of the angle adjustor by connecting bolts, and an angle of the angle adjustor, that is the angle between the angle rod and the horizontal rod, is adjusted; inner diameters of the locating rings are larger than external diameters of drilling pipes, therefore normal operation of the drilling pipes is guaranteed, and the angle of hole drilling is controlled. Compared with traditional tunnel manual blower gun drilling construction, the device used for controlling the angle of hole drilling can make angle control of hole drilling more accurate.

The invention discloses a method for manufacturing a silicon carbide high-temperature ion implantation mask with a selectivity cut-off layer. The method includes the steps of cleaning a silicon carbide substrate, adopting a heat oxidation method to grow an ion implantation sacrificial layer mask on the silicon carbide substrate, adopting an LPCVD method to grow the selectivity cut-off layer used for controlling the etching process on the obtained ion implantation sacrificial layer mask, adopting an epitaxy or growing method to form an insulating medium masking layer on the selectivity cut-off layer, evenly coating the insulating medium masking layer with photoresist, carrying out photoetching to develop a selectivity ion implementation area window, carrying out dry-method etching or corrosion on the insulating medium masking layer from the selectivity ion implementation area window to the surface of the selectivity cut-off layer, continuously carrying out etching or corrosion to the surface of an ion implantation sacrificial layer, removing the photoresist, and obtaining the ultra-thin ion implementation sacrificial layer mask. The method for manufacturing the silicon carbide high-temperature ion implantation mask is suitable for a silicon carbide SBD, a JBS diode, an MOSFET device and other silicon carbide devices requiring high-temperature high-energy ion implantation.