The invention discloses an epitaxial structure of an LED and a manufacturing method of the epitaxial structure, and belongs to the technical field of semiconductors. The epitaxial structure comprisesa
sapphire substrate, and a
composite structure, a
gallium nitride buffer layer, a non-doped
gallium nitride layer, an N type
semiconductor layer, an
active layer and a P type
semiconductor layer laminated on the
sapphire substrate respectively; the
composite structure comprises (n+1) first sub
layers and n second sub
layers, n represents a positive integer, and the (n+1) first sub
layers and n second sub layers are laminated alternatively; and each first sub layer is an aluminum
nitride layer, and each second sub layer is an
alumina layer. The aluminum nitride layers and the
alumina layers are laminated alternatively on the
alumina sapphire whose main component is alumina, the
crystal lattice characteristic is changed from transition from alumina to aluminum nitride to dispersion from oneinterface to the whole
composite structure, the influence of abrupt change of a
crystal lattice constant is changed, a stress generated by
crystal lattice mismatch is dispersed effectively and avoided from being too concentrated, and the crystal quality of an
active layer and the like formed subsequently can be improved.