The invention provides a surface
passivation treatment method for optimizing a tunneling oxidation
passivation battery, which comprises the following steps of: in a BOE cleaning step, putting an annealed
silicon wafer into a
mixed solution of groove type cleaning equipment, cleaning the
silicon wafer in the
mixed solution for more than 120 seconds, taking out the
silicon wafer, cleaning the silicon wafer with sufficient DIW, putting the silicon wafer into an acid solution, and cleaning the silicon wafer in the acid solution for more than 120 seconds; the silicon wafer is taken out and completely cleaned with a large amount of DIW, bubbling is carried out in the cleaning process, and finally, the surface of the silicon wafer is passivated with a (NH4) 2S solution; and dividing the antireflection film into three
layers for preparation in the antireflection film manufacturing step. According to the invention, the P-type emitter of the battery is passivated by
sulfur, and aluminum
oxide is assisted to accumulate negative charges to enhance the field
passivation effect; a
dangling bond is passivated on the surface of the silicon, and reduction of a
process window caused by
hydrogen passivation accumulation [H] sources in the preparation process of the
silicon nitride is liberated; and performance degradation caused by dissipation of [H] in long-term use of the battery
assembly is reduced.