The invention discloses a large power thick film circuit high temperature sintering resistor paste for aluminium nitride base materials, and a preparation method thereof. The thick film resistor paste includes an inorganic bonding phase, a composite function phase, and an organic carrier, wherein an inorganic bonding phase is formed by SiO2, B2O3, ZnO, Al2O3, MgO, nucleus agent, and rare earth oxide system microcrystalline glass powder; the composite function phase is mixed powder of spherical silver powder, sheet shape silver powder, and nanometer palladium powder; and the organic carrier is formed by organic solvent, high-molecular thickening agent, dispersant, antifoaming agent and thixotropic agent. The preparation method comprises the steps: inorganic bonding phase preparation, composite function phase preparation, organic carrier preparation and resistor paste preparation. The paste has high thixotropy and fluidity, and the microcrystalline glass powder and the conductive phase do not react with the aluminium nitride base materials, and the sintered resistance layer has the advantages of being smooth and compact in structure, being high in adhesive force, being aging resistant, being adjustable in sheet resistivity, being lower and adjustable in the resistance temperature coefficient and being high in printing sintering characteristic.