7 results about "Plasma rotation" patented technology

The invention discloses a plasma rotation type large-area polycrystalline MPCVD diamond growth method, and relates to the technical field of microwave plasma chemical vapor deposition, and the method comprises the following steps: S1, setting environmental parameters of diamond growth in a reactor through a microwave feeder, sampling plasma state data in the reactor, and calculating the plasma state data; if the plasma is stably started, executing S2; and S2, the plasma state in the reactor is adjusted through the plasma regulator according to the plasma state data in the reactor, the coverage area of plasma discharge is increased, and then the growth area of the polycrystalline diamond is increased.

The invention discloses a novel plasma rotation groove cutting machine, and relates to the field of plate cutting, the novel plasma rotation groove cutting machine comprises a base, extension blocks are fixedly arranged on the two sides of the base, supporting columns are slidably arranged at the ends of the extension blocks, adjusting plates are fixedly arranged at the ends of the supporting columns, and cutting pieces are fixedly arranged at the ends of the adjusting plates; according to the novel plasma rotation groove cutting machine, accurate centering limiting is conducted on a workpiece through the limiting assembly, it is ensured that the workpiece is located at the correct position all the time, meanwhile, the horizontal state of the workpiece is adjusted, machining errors caused by inclination of the workpiece are eliminated, and therefore the machining precision is remarkably improved, and error accumulation is reduced.

The present disclosure provides a method including placing a substrate on a cylindrical electrode in a vacuum vessel, introducing at a first location in the vacuum vessel a first gaseous species capable of depositing a layer onto the substrate when formed into a plasma, and introducing at a second location in the vacuum vessel a second gaseous species capable of etching the substrate when formed into a plasma. The first location is closer to an entrance of the vacuum vessel at an unwind side than to the second location. The method further includes generating a plasma from the first gaseous species and the second gaseous species between the cylindrical electrode and a counter-electrode, rotating the cylindrical electrode to translate the substrate, and exposing a major surface of the substrate to the plasma. A layer is deposited on at least a portion of the major surface of the substrate and the substrate is etched, thereby forming nanostructures including at least one of nano-pillars, nano-columns, or continuous nano-walls including nano-pillars or nano-columns. An article is also provided, made by the method.

The invention belongs to the field of alloy material preparation, and particularly relates to a process for preparing spherical tantalum-tungsten alloy powder through plasma rotating electrode gas atomization. The technical problems that tantalum-tungsten alloy powder prepared through an existing method is uneven in particle size and poor in sphericity degree are mainly solved. Through component design optimization and preparation process optimization, metal raw materials are weighed according to the target tantalum-tungsten alloy chemical components in proportion, and a uniform cast ingot is obtained through smelting in a vacuum arc smelting furnace; and processing the cast ingot into an electrode bar with a smooth surface, and mounting the electrode bar on plasma rotating electrode atomization equipment. According to the process, a plasma torch is combined with a high-speed rotating electrode, so that the end face of a tantalum-tungsten rod is molten in an inert atmosphere to form a liquid film, the liquid film is atomized into fine liquid drops under the action of centrifugal force, and the fine liquid drops are rapidly solidified to form spherical powder; and finally, the powder is collected and screened, finished powder is obtained, the sphericity degree of the powder reaches 90% or above, particle size distribution is uniform, and the powder can be used in the fields of 3D printing, the aerospace industry and the like.

The invention relates to the technical field of plasma digital control, and provides a method and system for controlling plasma rotation, and the method comprises the steps: moving an electrode tip to a preset magnetic surface according to target window positioning data, and applying a deflection bias voltage after a vacuum condition is satisfied, so that the two magnetic surfaces form a radial potential difference, induce a radial electric field and generate a radial current; lorentz force distribution is determined in combination with magnetic field data, torque is generated, a momentum source area is constructed to drive plasma to rotate, and then an adjustment instruction is generated in combination with density parameters and the like to optimize the rotation state. According to the method, on the premise that the three-dimensional magnetic field configuration is complex and impurity sources are not added, plasma rotation and a boundary electric field are controlled, and boundary transport suppression and constraint performance improvement are achieved.

The application relates to the technical field of plasma digital control, and provides a method and system for controlling plasma rotation, which comprises the following steps: moving an electrode head to a preset magnetic surface according to target window positioning data, applying a deflection bias after satisfying a vacuum condition, making two magnetic surfaces form a radial potential difference, inducing a radial electric field and generating a radial current; combining magnetic field data to determine a Lorentz force distribution, generating a moment and constructing a momentum source area to drive plasma rotation; and combining density parameters to generate an adjustment instruction to optimize the rotation state. The method can control plasma rotation and a boundary electric field under the premise of a complex three-dimensional magnetic field configuration without increasing impurity sources, and realizes boundary transport inhibition and constraint performance improvement.

There is provided a method for separating an input feedstock using thermal plasma to obtain a processed feedstock and / or remove one or more hazardous compounds. There is also provided system for same comprising a plasma vortex reactor and a separator. There is also provided a method for forming a product from an input or processed feedstock using thermal plasma. There is also provided a system for same comprising a blender and a plasma rotary furnace