The invention relates to a power
semiconductor module. According to one example of the invention, the power
semiconductor module has a circuit board with a structured first
metal structure and at least one second
metal structure arranged on the upper side of the circuit board. At least one housingless
semiconductor chip is arranged on the top side of the circuit board, the
semiconductor chip has a plurality of contact electrodes, which in turn are connected to corresponding contact pads of the first
metal structure on the top side of the circuit board via bonding wires connect. During operation, the contact electrodes and the corresponding first part of the contact lugs are connected to a
high voltage. All high-
voltage-connected contact lugs are electrically conductively connected to the second metal structure via inner-layer connections. The insulating layer completely covers the
chip and the separation area of the circuit board surrounding the
chip, wherein all contact pads and inner layer connections for high-
voltage switching are completely covered by the insulating layer. The plurality of contact electrodes and the corresponding second portion of the contact pads are at a
low voltage during operation.