The invention relates to the field of functional ceramics, and provides a low-volume-resistivity
silicon carbide ceramic material and a preparation method thereof in order to reduce the volume resistivity of
silicon carbide ceramics and enable the
silicon carbide ceramics to meet the use requirements of
semiconductor etching equipment. The preparation method comprises the following steps: in a CVD (
Chemical Vapor Deposition) furnace, firstly placing a
graphite base material, then vacuumizing the CVD furnace, and then re-pressing to
atmospheric pressure; introducing process gas, preserving heat for 50-60 hours to obtain a CVD-SiC
ceramic material, cooling to
room temperature, and discharging from the furnace; carrying out annealing treatment on the prepared
silicon carbide ring; then
processing the inner wall and the outer wall of the obtained
silicon carbide annular material; finally, the
silicon carbide ring with the
graphite exposed on the inner surface and the outer surface is placed in a
graphite oxidation furnace, the low-volume-resistivity silicon carbide
ceramic material is obtained
after treatment, the overall compactness, heat
conductivity and bending strength of the material are guaranteed, the volume resistivity of the silicon carbide ceramic is reduced, and the silicon carbide ceramic can be conveniently applied to
etching equipment.