The invention provides a
titanium sapphire crystal growth and post-treatment integrated continuous preparation device and method, a
heating system of the device is a double-temperature-zone two-section heating body, the
temperature gradient in a
hearth is controlled through cooperation of an upper-section heating body and a lower-section heating body, and
titanium sapphire crystal growth and in-situ constant-temperature annealing are achieved. During
crystal growth, Al2O3 and Ti2O3 raw materials are loaded into the
crucible, the
crucible is integrally placed in the upper-section heating body, the bottom of the
crucible is in contact with the heat exchange rod, and parameters such as
hearth atmosphere and He gas flow are adjusted to complete
crystal growth. And after
crystallization is completed, replacing H2 + Ar
mixed gas with H2, respectively adjusting the power of the upper and lower heating bodies to form a constant temperature field, and carrying out in-situ constant-temperature
hydrogen annealing on the large-size
titanium sapphire crystal. The temperature field gradient of
crystal growth can be adjusted in real time, the preparation periods of titanium sapphire
crystal growth, annealing and the like are shortened, the thermal stress in the crystal is reduced, the Ti < 4 + > concentration in the crystal is reduced, crystal
cracking is inhibited, and the
optical quality, the FOM value and the yield of the crystal are improved.