The invention relates to a terahertz sensor, in particular to a graphene nanoribbon array terahertz sensor based on optical waveguide. The graphene nanoribbon array terahertz sensor comprises a bottom grid, a low-resistivity silicon substrate, a lower insulation layer, a graphene nanoribbon array, a source leak electrode, an upper insulation layer, a top grid, an optical waveguide structure, an incidence coupling raster, an emitting coupling raster and a driving circuit, wherein the lower insulation layer, the graphene nanoribbon array, the source leak electrode, the upper insulation layer, the top grid, the optical waveguide structure, the incidence coupling raster, the emitting coupling raster and the driving circuit are arranged on the substrate; the graphene materials have the photoelectric characteristics of high carrier mobility, electronic scattering-free transmission and adjustable energy gap and adopt the graphene nanoribbon and p-i-n photoelectric detecting structure. By means of characteristics of collection, transmission and gathering of the optical waveguide, and the composite structure of the large-area optical waveguide and the graphene nanoribbon array is designed. The terahertz sensor has the advantages of high light energy utilization rate, high sensitivity, fast response, simple operation and structure at the room temperature, convenience in integration and small size, can be widely applied to the fields of security check, drug smuggling investigation, counter terrorism, medical imaging, nondestructive testing, electronic countermeasures, radar, remote sensing, outer space wideband communication and the like.