The invention discloses a multi-grid
transistor, which comprises a substrate, an
oxide layer positioned on the substrate, a fin-shaped structure which is positioned on the
oxide layer, is connected with the substrate and comprises a trench region and a source region and a drain region which are positioned at two ends of the trench region, a grid
dielectric layer which is positioned on the fin-shaped structure and wraps the trench region, and a grid which is positioned on the
oxide layer and the grid
dielectric layer and is perpendicular to the fin-shaped structure. The multi-grid
transistor is characterized in that the source region and the drain region consist of
metal silicate. According to a
semiconductor device and a manufacturing method thereof, the
metal silicate is completely used as the source region and the drain region of the fin-shaped structure of the multi-grid
transistor, so that source and drain serially connected resistance is effectively reduced, and the problem that a non-crystallized region cannot be crystallized after being quenched because of
doping of a source and a drain is solved; and furthermore, doped
ion gathering regions are arranged at interfaces between the trench region and the
metal silicate, so that the
Schottky barrier height is effectively reduced, and the device performance is improved.