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49results about How to "Eliminate scatter" patented technology

Amblyopia therapeutic equipment

The invention provides an amblyopia therapeutic instrument, comprising two parts: an optical mechanical structure system and a control circuit system; the two parts are organically combined with each other so as to form a therapeutic instrument with amblyopia disease treatment function; the control circuit system of the amblyopia therapeutic instrument comprises a keyboard, a keyboard detection circuit, a singlechip system, a speech prompting circuit, a grid, an optical brush, a coiling mechanism, a light source and a light source plate control circuit; the keyboard is used for inputting instructions which are detected by the keyboard detection circuit and transmitted to the singlechip system to be processed; subsequently, the singlechip system is taken as a micro-controller so as to emit control instructions to all control circuits and drive the execution mechanism to work; the optical mechanical structure system of the amblyopia therapeutic instrument of the invention consists of an upper machine cover, a lower case, a guideway component, a pupil adjusting mechanism, an optical brush rotation mechanism, a coiling mechanism and a light source rotation mechanism; the amblyopia therapeutic instrument has the advantages and effects that the treatment methods normally adopted by existing amblyopia therapeutic instruments in the market are integrated into a whole, the structure is optimized, the system performance is more excellent, the operation is more convenient and the man-machine interface is more friendly.
Owner:BEIHANG UNIV

CMOS device structure based on silicon-on-insulator substrate and preparation method thereof

The invention provides a CMOS device structure based on a silicon-on-insulator substrate and a preparation method thereof. The CMOS device structure comprises the silicon-on-insulator substrate and a CMOS device. The silicon-on-insulator substrate comprises bottom silicon, an insulating layer and top silicon, and the positions corresponding to preparation of transistor channels of the insulating layer is provided with grooves penetrating through the top silicon and the bottom silicon. The CMOS device is manufactured on the silicon-on-insulator substrate, and the channels of the CMOS device are manufactured in the top silicon corresponding to the grooves. The CMOS device is manufactured on the silicon-on-insulator substrate. The positions corresponding to preparation of the transistor channels of the insulating layer of the silicon-on-insulator substrate are provided with the grooves penetrating through the top silicon and the bottom silicon so as to arrange holes below a CMOS device body region, and thus reliability of the subsequently prepared CMOS device can be greatly increased. The CMOS device structure is simple in structure and method, and reliability of the device can be effectively enhanced so that the CMOS device structure has wide application prospect in the field of semiconductor manufacturing.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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