This invention discloses a high-density, high-thermal-
conductivity hot-pressed aluminum
nitride substrate and its preparation method, belonging to the field of
ceramic thermally
conductive materials technology. The aluminum
nitride substrate is composed of aluminum
nitride powder and a composite
sintering aid, the composite
sintering aid being a
fluoride, with a total addition amount of 2%-8% of the aluminum nitride
powder mass. The aluminum nitride substrate has a multi-layer
composite structure, including an upper dense layer, a middle stress buffer layer, and a lower dense layer. The
porosity of the upper and lower dense
layers is ≤0.3%, and the
porosity of the middle stress buffer layer is 1%-5%. The preparation method includes steps such as
raw material mixing, multi-layer molding, hot-pressing
sintering, and
diamond wire saw cutting. This invention achieves
grain boundary purification through a pure
fluoride composite aid
system, combined with a multi-layer structure design to absorb
cutting stress and thermal stress, resulting in a substrate density ≥99.5%,
thermal conductivity ≥240W / (mK), and an ultra-thin substrate edge chipping rate ≤3%, while simultaneously reducing the sintering temperature and shortening the
production cycle.