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Method for determining incident angle of particles in three-dimensional cellular model etching process

The invention relates to a method for determining an incident angle of particles in a three-dimensional cellular model etching process, which belongs to the field of the etching process in the micro-electron machining; and the method comprises the following steps of selecting two tangent planes which are vertical to an incident plane according to an incident direction of etching particles; respectively selecting surface cellular surrounding an incident point on the two tangent planes, adopting a position coordinate as a data sampling point, conducting fitting calculation by adopting a two-dimensional curve fitting method, and further solving a tangent vector of the incident point on the two coordinate axis directions; and finally conducting cross-product operation for the two tangent vectors to solve the normal surface vector of the incident point, and acquiring the incident angle of the etching particles. A three-dimensional curve fitting problem is converted to two two-dimensional curve fitting to be solved, so that the solution of multi-element equations can be reduced, the calculation complexity is reduced, and simultaneously the treatment of ill-conditioned system of equations in a polygonal curve fitting can be avoided; and the calculation accuracy and the operation speed can be greatly improved.
Owner:TSINGHUA UNIV
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