71results about How to "Sufficiently suppress" patented technology

A first power supply layer spreads over an insulating layer outside an island of a second power supply layer. A first ground layer spreads over an insulating layer outside an island of a second ground layer. First and second electrically-conductive pieces are interposed between the first and second power supply layers as well as between the first and second ground layers. A capacitor is interposed between the first and second electrically-conductive pieces. Power supply noise is forced to inevitably pass through the electrically-conductive pieces. The power supply noise thus reliably flows into the capacitor through the first and second electrically-conductive pieces. A printed wiring board is in this manner allowed to enjoy a sufficient suppression of the power supply noise.

A heat spreading member is received on a predetermined surface of an electronic component. The heat spreading member extends larger than the predetermined surface. A contact piece is contacted with the heat spreading member over a contact area smaller than the predetermined surface. The contact piece serves to realize concentration of an urging force applied to the heat spreading member. The heat spreading member is thus reliably urged against the electronic component. The concentration of the urging force serves to prevent the heat spreading member and the electronic component from camber even if heat is applied to the heat spreading member and the electronic component. Separation is thus avoided between the heat spreading member and the electronic component. The heat spreading member reliably keeps contacting with the electronic component, so that the electronic component package is allowed to enjoy improvement in heat radiation.

As a transistor including an oxide semiconductor film, a transistor in which a metal oxide film containing a constituent similar to that of an oxide semiconductor film is provided between the oxide semiconductor film and a gate insulating film and a gate insulating film containing a constituent different from that of the metal oxide film and that of the oxide semiconductor film is provided to be in contact with the metal oxide film is provided. The oxide semiconductor film used for an active layer of the transistor is a highly purified and electrically i-type (intrinsic) film which is formed by heat treatment through which an impurity such as hydrogen, moisture, a hydroxyl group or a hydride is removed and oxygen which is a main component of the oxide semiconductor and reduced together with the impurity removal step is supplied.

A press-formed product includes a body having a transverse cross section including a bottom portion and a shoulder portion contiguous to the bottom portion through an R end. In the transverse cross section, a first region from the R end to a position a distance away in a bottom portion extending direction, and a second region which is part of the bottom portion and is contiguous to the first region have a work-hardening distribution introduced by press-forming. The work-hardening distribution has an average hardness Hv1 of an area of the first region from a steel sheet surface to a depth obtained by multiplying a steel sheet thickness by 0.2 and an average hardness Hv2 of an area of the second region from the steel sheet surface to a position obtained by multiplying the steel sheet thickness by 0.2 to satisfy a relationship of Hv1>1.05×Hv2.

A solid-state imaging device includes: a plurality of N-type photodiode regions formed inside a P-type well; a gate electrode having one edge being positioned adjacent to each of the photodiode regions; a N-type drain region positioned adjacent to the other edge of the gate electrode; an element-isolating portion having a STI structure, and a gate oxide film having a thickness of not more than 10 nm. One edge of the gate electrode overlaps the photodiode region. First, second and third regions are formed on a surface portion extending from the photodiode region to the drain region, in conditions such that the first region is disposed with a predetermined distance from one edge of the gate electrode and has a P-type first concentration C1, the second region is disposed with one edge positioned adjacent to the first region and the other edge overlapping the gate electrode and has a P-type second concentration C2, and the third region is disposed with one edge positioned adjacent to the second region and the other edge positioned adjacent to the drain region and has a P-type third concentration C3, wherein C1>C2>C3 or C1≈C2>C3. The readout characteristic at a low voltage is satisfactory, and image defects such as white flaws and dark current are suppressed sufficiently.