This invention belongs to the field of
ceramic materials technology, specifically relating to a high-purity, dense
silicon carbide ceramic and its preparation method and application without additives. The preparation method of this invention includes the following steps: constructing a hollow mesoporous
silicon carbide composite precursor; heat-treating the
silicon carbide composite precursor to obtain a hollow mesoporous
silicon carbide composite framework; uniformly mixing the hollow mesoporous
silicon carbide composite framework with a
fluoropolymer, and subjecting the mixture to in-situ gas-phase
impurity removal and carbothermic reduction reaction to prepare high-purity hollow mesoporous
silicon carbide powder; and densifying the high-purity hollow mesoporous silicon carbide
powder by pressure
sintering without adding additional
sintering aids to obtain high-purity, dense silicon carbide
ceramic. The preparation method of this invention can achieve additive-free densification of silicon carbide ceramics at relatively low temperatures. The resulting material has characteristics such as pure grain boundaries,
high density, excellent mechanical properties, and strong resistance to
plasma corrosion, making it suitable for application in the preparation of electrostatic chucks.