The application discloses a FinFET device temperature-
dose coupling modeling method, and belongs to the field of advanced
semiconductor technology. The application solves the problem that a traditional
irradiation model cannot give the degradation rule of a FinFET device under different temperature-
dose. The application constructs a multi-
physical field coupling nonlinear
irradiation model, overcomes the limitation that a traditional
total dose model only depends on the
electric field intensity, effectively breaks through the limitation that a hole yield in the traditional model is only affected by the
electric field and cannot reflect the degradation rule under different temperature-
dose, and guarantees the accuracy of
simulation results. Based on experimental data feedback, the application realizes dynamic correction of
coupling factors, and improves the precision of the temperature-dose coupling model. By extracting the electrical characteristic parameter drift, the application constructs an analytical function of the evolution of the coupling factors with temperature and dose, and realizes accurate parameterization characterization of the
radiation-induced trap charge accumulation process under different temperature-dose. The application can be applied to temperature-dose coupling modeling of a FinFET device.