3results about How to "Guaranteed performance parameters" patented technology

This utility model relates to a small-displacement, high-speed cycloidal hydraulic motor, belonging to the field of hydraulic transmission technology. The small-displacement motor features a grooved stepped hole at the end of the pressure balance plate that contacts the linkage shaft. The rotor-stator pair parameters are configured to ensure the motor's output displacement is less than 100 ml / r, the stator thickness is less than 10.5 mm, and the linkage shaft's meshing spline is a four-segment toothed structure. This utility model's small-displacement motor boasts a compact structure, stable and reliable small-displacement performance ensured by the rotor-stator pair parameters, and sufficient strength and good heat treatment processability thanks to the short spline of the linkage shaft.

The present application provides a method for manufacturing an SBD device, the steps of which include: obtaining a diffusion zone window on the epitaxial layer on the front side of a silicon wafer; etching the epitaxial layer to obtain a diffusion zone groove; coating a boron source on the surface of the silicon wafer and performing a furnace tube process on it to form a PN junction in the groove; removing excess boron source on the surface of the silicon wafer and in the groove, and then etching the oxide layer on the gold semi-contact window to form a barrier zone; processing the barrier zone to form a Schottky silicide; processing the front side of the silicon wafer to obtain a front terminal area field plate structure. The manufacturing method of the present application adopts a boron source coating method to replace the existing ion implantation method, which not only has good adjustability, but also can obtain a boron source layer thickness with uniform thickness and good consistency in the doping area; at the same time, the Schottky-based structure is optimized to extend the edge of the barrier zone to the middle of the diffusion zone groove, which can protect the weakest and most easily broken-down part of the barrier zone, improve the device quality and ensure the performance parameters, improve the yield of finished products, and also significantly reduce the production cost.

The invention provides a manufacturing method of an SBD device. The manufacturing method comprises the steps that a diffusion region window is obtained on an epitaxial layer on the front face of a silicon wafer; etching the epitaxial layer to obtain a diffusion region groove; coating a boron source on the surface of the silicon wafer, performing a furnace tube process on the silicon wafer, and forming a PN junction in the groove; removing the redundant boron source on the surface of the silicon wafer and in the groove, and then etching the oxide layer on the metal semiconductor contact window to form a barrier region; processing the barrier region to form a Schottky silicide; and processing the front of the silicon wafer to obtain a front terminal area field plate structure. According to the manufacturing method, a boron source coating mode is adopted to replace an existing ion implantation mode, adjustability is good, and the boron source layer with uniform thickness and good consistency can be obtained in the doped region; meanwhile, the Schottky layer structure is optimized, the edge of the barrier region is extended to the middle of the diffusion region groove, the weakest and easy-to-break place of the barrier region can be protected, the quality of the device is improved, the performance parameters are ensured, the yield of finished products is improved, and the production cost can be greatly reduced.