The invention discloses a
semiconductor device and a formation method of the
semiconductor device. The method comprises the steps that a substrate is provided, and the substrate comprises a
storage area and a periphery area; a
storage area masking layer is formed on the substrate of the
storage area; a
protection ring wrapping the storage area masking layer is formed on the substrate of the storage area; the substrate of the periphery area is provided with a periphery area floating
barrier layer and a periphery area masking layer in sequence; protection
layers are formed on the storage area masking layer, the
protection ring and the periphery area masking layer, wherein the
protection layer in the storage area is the storage area
protection layer, and the
protection layer in the periphery area is the periphery area protection layer; the periphery area protection layer, the periphery area masking layer and the periphery area floating
barrier layer are sequentially removed, and the substrate of the periphery area is revealed. According to
semiconductor device and the formation method of the
semiconductor device, by the arrangement of the protection layer and the
protection ring surrounding the storage area, the storage area can be protected when an upper film layer of the substrate of the periphery area is removed, the storage area can be protected from the
impact of the periphery area
etching technique, the
etching process window of the periphery area can be effectively enlarged, the yield of device manufacturing can be improved, and the cost of device manufacturing can be reduced.