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48results about How to "Refractive index stabilization" patented technology

Method for preparing graduated color film through magnetron sputtering machine

The invention discloses a method for preparing a graduated color film through a magnetron sputtering machine. The method comprises the following steps that S1, an optical film system is designed; S2,a baffle is designed, and the shape of the baffle is designed according to thickness change of an optical thin film structure simulated by software; S3, vacuum coating is conducted; and S4, color andoptical performance examination is conducted, the color LAB value, visible light reflectivity curve and visible light transmittance curve of a product obtained after vacuum coating are detected, if the test result is qualified, mass production preparation can be made, and if the test result is unqualified, operation returns to the step S1. A transition area of a graduated color film prepared withthe method is natural in gradual color change, the product color is easy to adjust, and graduated color films of different colors and visual effects can be prepared according to user preparations. Compared with electric beam evaporation deposition, a film layer prepared with the magnetron sputtering machine is compact in structure, the refractive index is stable, the film layer is more stable in optical performance, and thus color stability is better.
Owner:SHENZHEN THREE BEAM COATING TECH CO LTD

Zero-scattering linear particle and electromagnetic invisible material formed by the same

The invention discloses a zero-scattering linear particle and an electromagnetic invisible material formed by the same. The center of the particle is a metallic structure including metal units that are arranged in a linear mode periodically; the adjacent metal units are connected by connecting columns; the outsides of the metal units and the connecting columns are coated with a cylindrical dielectric medium, thereby forming the zero-scattering linear particle based on the solid cylindrical structure. The linear arrangement direction of the metal units and the height direction of the dielectric medium cylinder are identical with the electric field polarization direction of the incident electromagnetic wave during working. According to the invention the particle with the simple structure can be processed conveniently and can be processed into a material or structure with any shape according to different application demands. According to the instance simulation verification, a scattering width tending to zero can be obtained at the work frequency; and expanding to all frequency bands including a radio frequency band, a terahertz band, and even an optical wave band and the like can be realized directly by structural dimension scaling. Therefore, the provided particle can be widely applied to related application fields of the invisible material.
Owner:ZHEJIANG UNIV +1

Ce-containing low-temperature sealing glass as well as preparation and application method of Ce-containing low-temperature sealing glass

The invention discloses Ce-containing low-temperature sealing glass as well as preparation and application method of the Ce-containing low-temperature sealing glass. The Ce-containing low-temperature sealing glass consists of the following raw materials: B2O3, Bi2O3, ZnO and Ce(NO3)3 in a molar ratio of (10-50):(20-40):(5-30):(0-30). Through the coordination between high-concentration Bi2O3 and B2O3, the softening temperature of glass is lowered, so that low-temperature sealing is realized; Ce<3+> in a glass network prepared by melting quenching is transformed into Ce<4+>, the transformation of Bi<3+> in glass into Bi<5+> is prevented, and the refractive index of glass is stabilized; and Ce not only can further lower the softening temperature of the sealing glass, but also can adjust the expansion factor of the glass so as to remarkably improve the sealing property of the sealing glass. Moreover, Ce remarkably reduces the surface tension of the glass, improves the interface bonding property between the sealing glass and an alloy connector and is applicable to the field of photoelectric materials and other low-temperature precise sealing. According to the invention, the preparation raw materials are simple and easily available, the cost is low, the technology is simple and feasible, and the prepared low-temperature sealing glass has good performance and stable refractive index and meets the conditions of practical utilization and industrialization.
Owner:FUZHOU UNIV

Semiconductor silicon-based optical waveguide device and preparation method thereof

The invention provides a semiconductor silicon-based optical waveguide device and a preparation method thereof, and relates to the field of optical waveguide chip producing and manufacturing. The preparation method of the semiconductor silicon-based optical waveguide device comprises the following steps that (a) a bottom cladding layer is deposited on a non-polished surface of a single-surface-polished silicon wafer; (b) a lower cladding layer, a core layer and a mask layer are deposited in an overlapped mode in sequence on a polished surface of the single-surface-polished silicon wafer; (c) awaveguide channel is formed after the core layer is etched, and the mask layer is removed; and (d) an upper cladding layer is deposited on the etched core layer, and thus the semiconductor silicon-based optical waveguide device is obtained. Preferably, the mask layer is a metal mask layer, and the technical problems that quartz substrate slices are used in conventional waveguide devices, the dependency on the quality of the substrate slices is high and special quartz processing equipment needs to be ordered for manufacturing are solved. According to the preparation method of the semiconductorsilicon-based optical waveguide device, semiconductor silicon is adopted as a substrate slice, compatibility with silicon semiconductor manufacturing equipment is good, the influence of the substrateslice refractive index is avoided, and design and manufacturing are more flexible.
Owner:JILIN SINO MICROELECTRONICS CO LTD

A kind of CE-containing low-temperature sealing glass and its preparation and use method

ActiveCN106495487BLow softening temperatureAchieve low temperature sealingHigh concentrationExpansion factor
The invention discloses Ce-containing low-temperature sealing glass as well as preparation and application method of the Ce-containing low-temperature sealing glass. The Ce-containing low-temperature sealing glass consists of the following raw materials: B2O3, Bi2O3, ZnO and Ce(NO3)3 in a molar ratio of (10-50):(20-40):(5-30):(0-30). Through the coordination between high-concentration Bi2O3 and B2O3, the softening temperature of glass is lowered, so that low-temperature sealing is realized; Ce<3+> in a glass network prepared by melting quenching is transformed into Ce<4+>, the transformation of Bi<3+> in glass into Bi<5+> is prevented, and the refractive index of glass is stabilized; and Ce not only can further lower the softening temperature of the sealing glass, but also can adjust the expansion factor of the glass so as to remarkably improve the sealing property of the sealing glass. Moreover, Ce remarkably reduces the surface tension of the glass, improves the interface bonding property between the sealing glass and an alloy connector and is applicable to the field of photoelectric materials and other low-temperature precise sealing. According to the invention, the preparation raw materials are simple and easily available, the cost is low, the technology is simple and feasible, and the prepared low-temperature sealing glass has good performance and stable refractive index and meets the conditions of practical utilization and industrialization.
Owner:FUZHOU UNIV

Preparation method of LED epitaxial wafer distributed Bragg reflector

The invention discloses a preparation method of an LED epitaxial wafer distributed Bragg reflector, and the method comprises the steps: enabling quartz to rotate around the central axis of the quartzat a first angle in a first direction, enabling an electron beam to sweep a quartz ring fan-shaped region corresponding to the first rotating angle, and carrying out the preprocessing of the fan-shaped region; rotating the quartz around the central axis of the quartz at a first angle in a second direction opposite to the first direction to enable the electron beam to sweep over the fan-shaped region again so as to grow a first DBR layer with a first refractive index on the back surface of the LED epitaxial wafer; and growing a second DBR layer with a second refractive index on the first DBR layer. Impurities on the surface of the quartz ring are removed through pretreatment, and it is ensured that the first DBR layer formed after growth is high in adhesion to the LED epitaxial wafer and not prone to falling off. The evaporation capacity of the quartz ring in the pretreatment process can be accurately controlled by adjusting the rotating speed and time of the quartz ring, so that the quartz ring is prevented from generating excessive waste.
Owner:JUCAN PHOTOELECTRIC TECH (SUQIAN) CO LTD
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