Provided are an
etching composition containing (A) an
oxidizing agent; (B) a compound capable of releasing
fluoride ions or a salt thereof; (C) at least one amine compound selected from the group consisting of an amine compound (c1) having a specific structure, an amine compound (c2) having a specific structure, an amine compound (c3) having a specific structure,
piperazine, 1,5,9-triazacyclododecane, 1,4,7-triazacyclononane,
cyclen, cyclam, tetraethylenepentamine, and polyethyleneimine, and derivatives thereof, and (D) a
corrosion inhibitor, an
etching method, and a method for manufacturing a
semiconductor substrate.