The invention discloses a 14T 
radiation-resistant static 
storage cell, which is capable of improving SEU (
Single Event Upset) resistance, improving the speed of the 14T 
radiation-resistant static 
storage cell to a large extent under the situation that smaller 
cell area is sacrificed and reducing 
power consumption. During a reading-writing stage, a WL 
signal is in high level. When a circuit is in awriting stage, if BL is in high level and BLB is in low level, '1' can be written in a storage node Q through differential input transistors N4 and N5; if the BL is in low level and the BLB is in high level, '0' can be written in the storage node Q through the differential input transistors N4 and N5. When the circuit is in a reading stage, if the BL and the BLB are both in high level and data stored in the 
cell unit is '1' 
voltage can be discharged to the ground through transistors N4 and N0 by the BLB, 
voltage difference can be generated by a 
bit line, and then the data can be read out through a sensitive 
amplifier; if the data stored in the 
cell circuit is '0', the current can be discharged to the ground through transistors N5 and N1 by the BL, the 
voltage difference can be generated by the 
bit line, and then the data can be read out through the sensitive 
amplifier.