40results about How to "Avoid breakdown damage" patented technology

The invention discloses a constant temperature control system and control method for an X-ray fluorescence spectrometer, which consists of two parts of temperature measurement and temperature control. The temperature measurement part includes: constant current source drive circuit, bridge temperature measurement circuit, and filter limiter circuit; the control algorithm adopts PID linear controller and Fuzzy controller hybrid control; the heater drive circuit adopts photocoupler combined with bidirectional thyristor AC power control. The system of the invention has stable performance and strong anti-interference ability, and can realize a temperature resolution of 0.1°C, and a temperature setting and control accuracy of 36±0.2°C. The system of the invention can not only provide a constant temperature environment for the sample chamber and the spectroscopic chamber of the X-ray fluorescence spectrometer, but also can be applied to the measurement and testing of small environmental occasions requiring constant temperature adjustment.

The innovation of the invention proposes a device and a method for testing pre-power short circuit protection of a VR chip. By adding a voltage regulator module and adjusting the working timing of thepower supply terminal VCC and the voltage input terminal of the chip, the real working condition of the NCP4552x series chip can be truly reflected, thereby avoiding chip breakdown damage, improvingtest efficiency and reducing test costs.

The invention discloses a method for preparing a monoclonal anti-photoelectric protective film, comprising steps: S1, unwinding; S2, gluing; S3, drying; S4, winding; The glue solution in the tank is coated on the surface of the base film, and the glue solution in the glue tank is stirred by the stirring device, and the gas overflowing from the glue solution is absorbed by the suction device at the same time. In the preparation method of the monoclonal anti-photoelectric protective film of the present invention, the glue solution in the glue tank is stirred by setting a stirring device, so as to avoid the coagulation of the glue solution due to standing still for a long time, improve the yield rate of the double anti-photoelectric protective film, and simultaneously set the pumping The gas device can remove the toxic gas in time, prevent the toxic gas from being released into the air, and improve the working environment. The invention also discloses a monoclonal antibody photoelectric protective film.

The present invention provides a thyristor comprising a substrate of the first conductivity type, a buried layer of the second conductivity type formed on the substrate, an epitaxial layer of the second conductivity type formed on the upper surface of the buried layer, and an epitaxial layer of the second conductivity type formed on the epitaxial layer A first implantation region of the first conductivity type on the upper surface, a second implantation region of the second conductivity type located in the first implantation region, extending from the lower surface of the substrate to a plurality of first conductivity type implants in the substrate at intervals The third implantation region, the oxide layer located at the junction between the first implantation region and the second implantation region, extends from the upper surface of the first implantation region to the first implantation region to open a trench located outside the oxide layer, The trench is filled with a polysilicon layer of the first conductivity type, a gate metal layer located on the first injection region and the upper surface of the polysilicon layer. The invention also provides a preparation method of the thyristor, which reduces the forward voltage drop and conduction loss of the thyristor, and improves the working efficiency and reliability of the thyristor.

The invention discloses a coated core-shell structure composite particle and its preparation method and application. The coated core-shell structure composite particle includes a core structure and a shell layer 1 and a shell layer 2 coated on the core structure in sequence. And shell three, the core structure is titanium dioxide, the shell one is aluminum oxide, the shell two is poly(styrene-divinylbenzene), and the shell three is polymethyl methacrylate . The invention prepares a composite particle with a coated core-shell structure through multi-step emulsion polymerization, which can realize particle self-assembly induced by ultra-low voltage. Through the coating modification of inorganic and organic materials, the prepared composite particles have excellent electrical response type, and have good application prospects in the field of optoelectronics.

The invention provides a silicon carbide MOSFET driving circuit, which relates to the field of power conversion circuits. A PWM control circuit generates a PWM pulse signal. After the PWM pulse signalpasses through a driving signal amplifying circuit, a silicon carbide MOSFET switch is controlled by a resistor, and a power supply outputs +15V, 0V and -3V DC voltages. The +15V and -3V DC voltagessupply power to the driving signal amplifying circuit, and the 0V is connected to the source of the silicon carbide MOSFET. The silicon carbide MOSFET driving circuit utilizes the driving negative voltage shutdown to reduce crosstalk between the upper and lower tubes of the bridge arm circuit in the power electronic converter, avoiding the bridge arm direct connection, and improving the reliability of the silicon carbide MOSFET; the diode can clamp the gate voltage to a safe range, avoiding breakdown of the silicon carbide MOSFET gate; the circuit uses the MOS transistor M1 to form a dischargeloop, which speeds up the turn-off speed of the silicon carbide MOSFET, improves the switching speed of the silicon carbide MOSFET, and reduces the switching loss.

The invention relates to the photoelectric field and especially relates to an optical module, a signal output port thereof and a signal output port protection circuit. According to the invention, an OC or OD protection circuit is arranged, an optical module chip is effectively prevented from being directly connected with a pull-up power supply HOST VCC on a host side, and the optical module chip is prevented from being broken down and damaged due to the overlarge HOST VCC. In some embodiments, an anti-phase circuit is arranged to ensure that the output of the OC or OD protection circuit is consistent with the output of the optical module chip signal output port.

The invention provides a wind turbine generator blade anti-thunder air-terminal system. The system comprises a blade tip air termination, a shielding device, a lower guiding body, and at least two pairs of blade intermediate air terminations. The blade tip air termination and each blade intermediate air termination are respectively arranged on the blade tip of a wind turbine generator blade and the position of a blade surface, far away from the blade tip. The lower guiding body is arranged in the wind turbine generator blade, one end is connected with the blade tip air termination, and the other end is connected with each pair of blade intermediate air terminations, and the lower guiding body is used to lead lightening current into ground. The shielding device is arranged on two surfaces of the wind turbine generator blade, one end is connected with the blade tip air termination, and the other end is connected with the blade intermediate air termination, and the shielding device is used to shield discharge effect of the surface of the lower guiding body. Through embedding the metal shielding device on a suction surface and a pressure surface of the blade, surface electric field ofthe internal lower guiding body can be effectively shielded, and possibility of discharge of the surface of the lower guiding body is reduced, so that probability of failure lightning protection caused by failure of an air-terminal structure is effectively reduced, and the number of lightning stroke subjected to the blade is reduced.

The invention discloses an optical module with a blaze protection function. The optical module comprises a light reception assembly used for receiving a light signal, a boost circuit, a current mirror device and an MCU. The boost circuit sends high voltage generated by the boost circuit to a response current output terminal of the light reception assembly through the current mirror device and a current-limiting resistor. The current mirror device receives response current outputted by the light reception assembly, and sends the response current to the MCU after zoom processing. The MCU connects with boost voltage, and adjusts high voltage amplitude outputted by the boost circuit. According to the invention, a high voltage protection circuit is designed at a receiving end of the optical module, so that when a blaze reaches, the light reception assembly is prevented from breakdown and damage, and the optical module is effectively protected. At the same time, through employing a high integrated level transmit-receive one body chip to construct a module circuit, a circuit board dimension is reduced, a SFP interface packaging form is adapted, support of a digital diagnosis function is completed, and maintenance cost of a whole is reduced.

The invention provides a manufacturing method of a semiconductor device. The method comprises the following steps of forming a grid oxide layer on a semiconductor base; forming a grid material layer on the grid oxide layer; and using a dry method etching technology to etch the grid material layer so as to form a grid electrode and carrying out deion processing on the grid material layer during a grid electrode formation process. In the invention, during a process of using the dry method etching technology to etch the grid material layer so as to form the grid electrode, deion processing is performed on the grid material layer so that conditions that excess ions are accumulated in the grid material layer and the grid oxide layer generates breakdown damages are avoided, and then integral performance of the semiconductor device can be guaranteed.