The invention provides a soaking
trench gate IGBT (Insulated Gate Bipolar Translator) structure. The soaking
trench gate IGBT structure comprises an effective IGBT
cell and a gate thermosensitive
control unit, the effective IGBT cells are arranged to be
trench gate type IGBT cells; the grid thermosensitive
control unit comprises two thermistors and two diodes; wherein one
thermistor and one
diode are connected in series to form a first series
branch for controlling the opening speed of the gate, one end of the first series
branch is connected with the trench gate, and the other end is connected with the gate
metal; wherein the other
thermistor and the other
diode are reversely connected in series to form a second series
branch for controlling the gate turn-off speed, one end of the second series branch is connected with the trench gate, and the other end of the second series branch is connected with the gate
metal. According to the invention, through the trench gate and the thermosensitive gate
resistor which are independently arranged, the switching speed of a single
cell is automatically adjusted according to the temperature of the
cell, so that the loss of the cell with high temperature is reduced, and the purpose of reducing the
junction temperature of the cell is achieved. And for the whole IGBT
chip,
heat balance is realized.