30results about How to "Increase the rate of temperature change" patented technology

The present invention provides a process chamber and semiconductor processing equipment. The process chamber includes a chamber body, a shielding disk library and a shielding disk communicated with the inside of the chamber body, wherein a base and a second shielding disk are arranged in the chamber body. An thimble mechanism; also includes a transmission mechanism, the transmission mechanism includes a transmission arm and a temperature control device, wherein the transmission arm can move between the chamber main body and the shielding disk library, and can support the shielding disk; the temperature control device is arranged on the transmission arm and when the transfer arm moves to the inside of the chamber main body and is located at a position opposite to the processed workpiece carried by the first ejector mechanism, it is used to control the temperature of the processed workpiece. The process chamber provided by the invention can improve the temperature control efficiency and temperature control uniformity, and will not bring adverse effects to other parts in the chamber.

The invention provides a temperature control system and an optical console having the same temperature control system. The temperature control system comprises a refrigeration unit, a temperature controller and a switching power supply. The temperature controller controls the switching power supply to drive the refrigeration unit to carry out refrigeration or heating. The refrigeration unit comprises a copper heat radiation support plate, a first refrigeration sheet, a first heat insulation pad, an annular heat spacer, a temperature control copper block, a second refrigeration sheet, a second heat insulation pad and a heat radiation block. The two refrigeration sheets and the copper heat radiation support plate are used to cooperatively buffer temperature control, the conventional technical problem that the accumulated heat is high and the refrigeration is hard is solved, the temperature changing rate is greatly improved, the testing time is saved, the usage is convenient, and the low temperature refrigeration effect is good.

The invention relates to a temperature control method for equipment on a satellite in a system level thermal vacuum test. The method mainly includes a temperature range determining method for the equipment on the satellite, a high temperature determining method for the equipment on the satellite, an infrared heating cage manufacturing method before the test, a method for modifying the on-off state and the working state of the equipment on the satellite in the test process and an active temperature control heating loop starting / stopping threshold on the satellite, and a loop controlling method. According to the method, when the infrared heating cage is used for simulation based on external heat stream, temperature control of the equipment on the satellite is reasonable and effective, the temperature changing rate of the equipment on the satellite is increased, it is guaranteed that the temperature of the equipment does not exceed the checking and accepting level temperature range, and not only is the safety of the equipment on the satellite guaranteed, but also the purpose of eliminating potential early-stage defects of the satellite is effectively achieved.

The invention discloses a semiconductor epitaxial wafer substrate-bearing disk, a supporting device thereof and a metal organic chemical vapor deposition (MOCAD) reaction chamber. A substrate-bearing cavity which is used for bearing a substrate is arranged on the upper surface of the substrate-bearing disk of a semiconductor epitaxial wafer; an annular structure which is coupled with the upper end face of a supporting shaft is arranged at a position of the lower surface of the substrate-bearing disk, which is close to the outer surface of the substrate-bearing disk; the supporting device comprises the supporting shaft which is connected with the substrate-bearing disk in a coupling mode and the supporting shaft is a hollow shaft; the MOCAD reaction chamber comprises an annular reaction chamber wall, the supporting shaft which is located on the inner side of the reaction chamber wall and the substrate-bearing disk which is installed at the top end of the supporting shaft; and a spraying nozzle is arranged on the upper portion of the substrate-bearing disk. The structure of the MOCAD reaction chamber is characterized in that the substrate-bearing disk is the substrate-bearing disk of the semiconductor epitaxial wafer, the supporting shaft is the hollow shaft, a fixing shaft is arranged inside the hollow shaft, and a heater is arranged on the lower portion of the substrate-bearing disk. Accordingly, the substrate-bearing disk has a simple structure, the production process of the substrate-bearing disk is simplified, simultaneously, the thickness of the substrate-bearing disk can be thinner on the premise that the requirement for strength is met, materials are saved and the temperature change rate of the substrate-bearing disk is improved.