The invention belongs to the technical field of
ceramic target binding, and particularly relates to a bonding method of an ITO splicing type target material. The method comprises the following steps of preparing a
copper back plate and the target material, front correction of the
copper back plate, pasting a high-temperature
adhesive tape on the back plate, pasting
tin paper on the target material, fixing the back plate and a steel plate, metallization of the surface of the back plate, metallization of the surface of the target material,
processing of bound
indium layer, binding the target material, cooling, removing the high-temperature
adhesive tape and the
tin paper, ultrasonic flaw detection,
polishing, cleaning, packaging, and completing bonding. According to the bonding method, a front correction manner is adopted for the back plate, so that the back plate is reversely bent by a certain amount, the corrected back plate and the steel plate are fixed, the flatness of the back platein the process of temperature rise and fall is guaranteed,
cracking of the target material in bonding is prevented, and waste of the target material is caused; the splicing target material of the ITOis bonded, the size of the product is large, and the requirements of the size of the TFT-LCD /
OLED liquid crystal panel are met; and the bonding rate of the target material and the
copper back plate reaches 98% or above, the flatness is within 1 mm, and the subsequent
coating quality is improved.