The present invention relates to a method for fabricating a scanning probe
microscope (SPM)
nanoneedle probe using
ion beam which is preferably
focused ion beam and a
nanoneedle probe thereby. More particularly, the present invention relates to a method for fabricating a SPM
nanoneedle probe capable of being easily adjusted with an intended pointing direction of a nanoneedle attached on a tip of the SPM nanoneedle probe and of being easily straightened with the nanoneedle attached on the tip of the SPM nanoneedle probe along the intended pointing direction, and to a SPM nanoneedle probe thereby. Also, the present invention relates to a method for fabricating a
critical dimension SPM (CD-SPM) nanoneedle probe capable of precisely scanning the sidewall of an sample object in nanoscale using
ion beam which is preferably
focused ion beam, and to a CD-SPM nanoneedle probe thereby. More particularly, the present invention relates to a method for fabricating a CD-SPM nanoneedle probe capable of precisely scanning the sidewall of the sample object in nanoscale by bending a portion of an end of the nanoneedle attached on the tip of the SPM nanoneedle probe in a specific angle toward a direction other than an original direction in which the nanoneedle attached on the tip of the SPM nanoneedle probe extends out, and to a CD-SPM nanoneedle probe thereby. A method of fabricating scanning probe
microscope (SPM) nanoneedle probe using
ion beam, comprises: positioning the probe so that a tip of the probe on which the nanoneedle is attached faces toward a direction in which the
ion beam is irradiated; and aligning the nanoneedle attached on the tip of the probe with the
ion beam in parallel by irradiating the
ion beam toward the tip of the probe on which the nanoneedle is attached. A method of fabricating a
critical dimension scanning probe
microscope (CD-SPM) nanoneedle probe using ion beam, comprises: screening a certain portion of the nanoneedle attached on a tip of the probe using a
mask; and bending a part of the nanoneedle exposed out of the
mask to align the part of the nanoneedle by irradiating the ion beam on the part of the nanoneedle exposed out of the
mask, along the direction of the irradiated ion beam.