A
power semiconductor device comprising: a metallic conductor frame (2) comprising opposing main surfaces, one of which is a mounting surface (2a) and the other a
discharge surface (2b), and comprising a P-potential
electrode (21), intermediate potential electrodes (22a, 22b) and an N-potential
electrode (23) which are electrically independent; a switchable power
semiconductor chip (3, 3a, 3b, 3c, 3d) and a current detection
resistor (4) which is connected to the mounting surface (2a) of the conductor frame (2) via a conductive connecting element (5a); a conductor element (6, 6a, 6b, 6c) which connects an
electrode of the power
semiconductor chip (3, 3a, 3b, 3c, 3b) to a section of the conductor frame (2); and a resin (7) which covers a section of the mounting surface (2a) of the conductor frame (2), the power
semiconductor chip (3, 3a, 3b, 3c, 3b), the
resistor (4) and the conductor element (6, 6a, 6b, 6c), wherein the P-potential electrode (21) and the N-potential electrode (23) are positioned on a center line (C) of the conductor frame (2) and the conductor frame (2), the power
semiconductor chip (3, 3a, 3b, 3c, 3d), the conductor element (6, 6a, 6b, 6c) and the
resistor (4) are positioned symmetrically with respect to the center line (C).