84results about How to "Deep unity" patented technology

An OECO solar cell using a semiconductor single crystal substrate having a plurality of grooves, wherein a minimum groove depth h of each groove always satisfies the relation of h≧W1tan θ where θ represents an angle between a line connecting the lower end, along the thickness-wise direction of the semiconductor single crystal substrate, of an electrode formed in the groove and the upper end of the inner side face of the same groove having no electrode formed thereon, and a reference line normal to the thickness-wise direction, and W1 represents a distance between both opening edges of the groove; wherein the semiconductor single crystal substrate has thickness decreasing from a first side of a first main surface to a second side opposed to the first side; and wherein the plurality of grooves have a depth distribution of being deepest at a thickest position of the substrate, and a gradually becoming shallower towards a thinnest position of the substrate.

A folder is adapted to fold sheets. A drum having a circumferential surface is adapted to withdraw sheets from a stack or from an overlapping flow and feed the sheets to the folder. A creasing apparatus is operatively arranged with the drum and includes: a first creasing wheel which cooperates with the drum to crease the withdrawn sheets that are fed to the folder, and a tracing wheel positioned at least axis parallel with the first creasing wheel and running on the circumferential surface of the drum to maintain a constant distance between the first creasing wheel and the circumferential surface of the drum.

Provided is a circuit device having conductive patterns which are equally spaced apart and a manufacturing method thereof. A method for manufacturing a circuit device of the present invention includes the steps of: preparing a conductive foil; forming conductive patterns, which are included in a unit having at least regions for mounting circuit elements, by forming isolation trenches having a uniform width in the conductive foil; electrically connecting the conductive patterns to the circuit elements; sealing with a sealing resin so as to cover the circuit elements and to be filled in the isolation trenches; and removing the conductive foil in its thickness portions where no isolation trenches are provided.

Provided is a circuit device having conductive patterns which are equally spaced apart and a manufacturing method thereof. A method for manufacturing a circuit device of the present invention includes the steps of: preparing a conductive foil; forming conductive patterns, which are included in a unit having at least regions for mounting circuit elements, by forming isolation trenches having a uniform width in the conductive foil; electrically connecting the conductive patterns to the circuit elements; sealing with a sealing resin so as to cover the circuit elements and to be filled in the isolation trenches; and removing the conductive foil in its thickness portions where no isolation trenches are provided.

An apparatus and associated method for constructing prefabricated foam panels is provided. While making a longitudinal pass over a foam block, the apparatus flattens the foam block, cuts longitudinal kerfs in the foam block, and draws metal studs into the kerfs. The apparatus comprises a unique, heated blade having a shape similar to the cross section of a metal stud. The blade kerfs foam blocks, including blocks made of recycled or low-grade foam. The associated method includes kerfing the foam blocks by passing the blade through the foam blocks and drawing metal studs into the kerfs.

A first metal layer of tungsten is formed on a substrate in a scale. A second metal layer of chromium is formed on the first metal layer. The second metal layer is selectively removed with a mask of resist and an etching stopper of the first metal layer to form an optical grating.

To easily and accurately flush a substrate surface serving an SOI area with a substrate surface serving as a bulk area, make a buried oxide film, and prevent an oxide film from being exposed on substrate surface. After partially forming a mask oxide film 23 on the surface of a substrate 12 constituted of single crystal silicon, oxygen ions 16 are implanted into the surface of the substrate through the mask oxide film, and the substrate is annealed to form a buried oxide film 13 inside the substrate. Further included is a step of forming a predetermined-depth concave portion 12c deeper than substrate surface 12b serving as a bulk area on which the mask oxide film is formed on the substrate surface 12a serving as an SOI area by forming a thermally grown oxide film 21 on the substrate surface 12a serving as an SOI area on which the mask oxide film is not formed between the step of forming the mask oxide film and the step of implanting oxygen ions.

The present invention is directed to an embossed drawtape embossed with an enhanced gripping pattern. The enhanced gripping pattern features one or more embosses which enhance the ability of a person to grip the drawtape of a drawstring trash bag when gripping the drawtape in the direction of the width of the drawtape.

A ceiling hatch employs a frame having an upper edge and a lower edge and a passage bounded by a sidewall passing therebetween, the passage extending from the lower edge to the upper edge and having its minimum cross section at the lower edge. This frame is employed with an insulating block bounded by a top surface, a bottom surface and a side surface, and which is configured to be positionable substantially within the passage and substantially filling the same. A hinge attaches the frame to the insulating block, providing pivotable action between the insulating block and the frame about a pivot axis and allowing the insulating block to be swung out of the passage on an interference-free path such that the bottom surface of the insulating block is in a horizontal plane when the insulating block resides substantially within the passage.

An image sensor has a plurality of pixels each with a photoelectric conversion element and a detection transistor the threshold voltage of which fluctuates in accordance with electrical charge generated in the photoelectric conversion element. The image sensor includes a second conductivity type shield region and a first conductivity type photoelectric conversion region; a first conductivity type well region linked to the photoelectric conversion region; a ring-like gate electrode; a second conductivity type source region at the inside of the ring-like gate electrode; a second conductivity type drain region. The image sensor further includes a potential pocket region that is formed in the well region below the ring-like gate electrode and accumulates the electrical charge, wherein the width of the gate electrode is formed narrower in the part adjacent to the photoelectric conversion region than in other parts.