36results about How to "High deposition" patented technology

An ejector device for ejecting droplets of fluid onto a surface includes an ejector mechanism attached to a fluid reservoir through a fluid loading plate that is configured to pierce the reservoir and channel the fluid to a rear surface of the ejector mechanism by capillary action. The ejector mechanism may have a centro-symmetric configuration with a lead free piezo actuator and may be covered by an auto-closing cover.

To provide a flux-cored welding wire and a method for arc overlay welding attaining excellent weldability and low dilution ratio and obtaining a weld bead excellent in corrosion resistance in overlay welding using the flux-cored welding wire having an advantage of high deposition rate and deposition efficiency. The flux-cored welding wire for gas shielded arc welding including flux filled up in an outer sheath and using pure Ar as a shielding gas contains, as percentage to the total mass of the flux-cored welding wire, C: 0.20 mass % or below, Si: 15.00 mass % or below, Mn: 20.00 mass % or below, P: 0.0500 mass % or below, S: 0.0500 mass % or below, and Cr: 15.0-50.0 mass %, with the remainder being Fe and inevitable impurities.

The present invention relates to a method for preparing cerium oxide coated silica particles and cerium oxide silica particles obtainable by the method. The invention further relates to cerium oxide coated silica particles and the use thereof for polishing.

Electrochemical etching tailors topography of a nanocrystalline or amorphous metal or alloy, which may be produced by any method including, by electrochemical deposition. Common etching methods can be used. Topography can be controlled by varying parameters that produce the item or the etching parameters or both. The nanocrystalline article has a surface comprising at least two elements, at least one of which is metal, and one of which is more electrochemically active than the others. The active element has a definite spatial distribution in the workpiece, which bears a predecessor spatial relationship to the specified topography. Etching removes a portion of the active element preferentially, to achieve the specified topography. Control is possible regarding: roughness, color, particularly along a spectrum from silver through grey to black, reflectivity and the presence, distribution and number density of pits and channels, as well as their depth, width, size. Processing parameters that have been correlated in the Ni—W system to topography features include, for both the deposition phase and the etching phase of a nanocrystalline surface: duty cycle, current density, deposition duration, plating chemistry, polarity ratio. The relative influence of the processing parameters can be noted and correlated to establish a relationship between values for processing parameters and degree of topography feature. Control can be established over the topography features. Correlation can be made for any such system that exhibits a definite spatial distribution of an active element that bears a predecessor spatial relationship to a desired topography feature.

A process for the deposition of particulate material of a desired substance on a surface includes: (i) charging a particle formation vessel with a compressed fluid; (ii) introducing into the particle formation vessel a first feed stream comprising a solvent and the desired substance dissolved therein and a second feed stream comprising the compressed fluid, wherein the desired substance is less soluble in the compressed fluid relative to its solubility in the solvent and the solvent is soluble in the compressed fluid, and wherein the first feed stream is dispersed in the compressed fluid, allowing extraction of the solvent into the compressed fluid and precipitation of particles of the desired substance; (iii) exhausting compressed fluid, solvent and the desired substance from the particle formation vessel at a rate substantially equal to the rate of addition of such components to the vessel in step (ii) through a restrictive passage to a lower pressure whereby the compressed fluid is transformed to a gaseous state and a flow of particles of the desired substance is formed; and (iv) exposing a receiver surface to the exhausted flow of particles of the desired substance and depositing a uniform layer of particles on the receiver surface.

The present invention relates to a non-cellulosic polysaccharide derivative:

• • i) having a mean average molecular weight (Mw) from about 100,000 g/mol, preferably from about 150,000 g/mol and more preferably from about 200,000 g/mole to about 2,000,000 g/mol, preferably to about 1,800,000 g/mol and more preferably to about 1,400,000 g/mole; and
  • ii) containing at least one cationic group, with a cationic degree of substitution (DS_cat.)_extraction, from about 0.20 to about 0.30.

Disclosed herein is a fragrance composition and a method for making the same having a fragrance particulate and a viscoelastic gel; where the composition has enhanced fragrance retention throughout the processing of the composition.

Gas metal arc welding (GMAW) is a widely used process for joining metals. Its main advantage over its competition gas tungsten arc welding (GTAW) is its high productivity in depositing metals. However, to melt metal from the wire to deposit into the work-piece, additional heat is consumed and applied to the work-piece with an uncontrolled fixed proportion to the effective heat that melts the wire. Such additional heat is often in excess of the needed heat input for the work-piece. The side-effects include a waste of the energy, an increased distortion, and possible materials property degradation. This invention is to device a method to transfer this part of heat to melt the wire by adding two wires, which form a pair of arc spots, under a tungsten arc. It also devices a method to assure the arc between the two wires be maintained stable such that the transfer be successfully continuous. The successful continuous transfer improves the energy efficiency, eliminates the adverse effects on the distortion and materials property, and decouples the controls on mass input and heat input on the work-piece.

A system and method for reducing attractive forces between a deposition mask and a substrate is provided that enables high-resolution direct deposition of a patterned layer of material on a substrate using electrostatic chucks for holding the substrate and the shadow mask. A charge-dissipating shadow mask is utilized that comprises a thin conductive layer on the surface of the membrane of the shadow mask. The conductive layer helps to dissipate the charge that accumulates on the membrane of the shadow mask, thereby reducing the attractive forces between the substrate and the shadow mask. As a result, the shadow mask and substrate can be placed in closer proximity to each other than would be possible without the charge-dissipating shadow mask, thereby reducing feathering effects and enabling higher resolution direct deposition.

A method for electrodeposition of bronzes, with which the substrate to be coated is plated in an acid electrolyte that contains at least tin and copper ions, an alkylsulfonic acid and a wetting agent, and the preparation of such an electrolyte.

The present invention relates to a method and apparatus for fiber and/or fiber perform production and in particular, optical fiber and optical fiber preform production in which a fiber substrate and a multilayered preform can be continuously produced. The layered preform is constructed from particles deposited from one or more aerosol streams containing multicomponent particles wherein individual particles have the ratio of components as desired in the perform layer. Preferably, the components of the aerosol particles have a sub-particle structure in which the subparticle structure dimensions are smaller than the particle diameter and more preferably smaller than the wavelength of light and more preferably on the molecular scale. Preferably, the particles are deposited on the perform substrate via one or more deposition units. Multiple deposition units can be operated simultaneously and/or in series. As the preform is synthesized, it can be simultaneously fed into a drawing furnace for continuous production of fiber. The method can also be used for batch production of fiber preforms and fiber.

A process to deposit a thin film by chemical vapor deposition includes evacuating a chamber of gases; exposing a device to a gaseous first reactant, wherein the first reactant deposits on the device to form the thin film having a plurality of monolayers in thickness; evacuating the chamber of gases; exposing the device, coated with the first reactant, to a gaseous second reactant under a plasma treatment, wherein the thin film is treated by the first reactant; and repeating the previous steps.

Provided is a copolymer aqueous solution which exerts a high calcium carbonate-deposition suppressing ability even under high hardness condition, has excellent storage stability, and suppresses coloring of a detergent to yellow even when used as a detergent raw material. The water-soluble copolymer aqueous solution includes a water-soluble copolymer and hydrogen peroxide as essential components, in which: the water-soluble copolymer at least includes, as its structure, a structural unit originating from a monoethylenic unsaturated dicarboxylic acid (or dicarboxylate) monomer having 4 to 6 carbon atoms or its anhydride (a) at 30 to 60 mol %, a structural unit originating from a monoethylenic unsaturated monocarboxylic acid (or monocarboxylate) monomer having 3 to 8 carbon atoms (b), and a structural unit originating from a monoethylenic unsaturated monomer having a sulfonic (or sulfonate) group (c); the water-soluble copolymer has a weight average molecular weight of 1,000 or more and 50,000 or less; the water-soluble copolymer aqueous solution has a weight ratio of the hydrogen peroxide of 10 ppm to 50,000 ppm with respect to a solid content of the water-soluble copolymer aqueous solution; and the water-soluble copolymer aqueous solution has a weight ratio of water of 33% to 99%.

The invention relates to a metal jet x-ray tube which is less affected by the problem of the power density at the point of impact of the electron beam on the anode component than conventional tubes. For this purpose the metal jet x-ray tube has a metal jet (6) as anode component (7), which metal jet is so thin that an electron beam (4) impinging on the metal jet (6) is only partially decelerated by the metal jet. Furthermore a blade cathode is provided as a cathode component (3), which blade cathode comprises a cathode blade (10) directed with a slight inclination downwards in the direction of the liquid metal jet (6) of the anode component (7).

Pharmaceutical pressurized metered dose inhalers are disclosed having a composition free of CFCs and totally or partially free of HFAs, thus allowing the manufacture of medicinal aerosols without damaging the atmospheric ozone layer and with low or negligible greenhouse effect.

Provided are a mono-ethylene glycol (MEG) recovery apparatus and a MEG recovery method. The MEG recovery apparatus includes a pretreater receiving the raw material from a raw material supplier to remove the low soluble salts, a first distiller connected to the pretreater to receive the raw material from which the low soluble salts are removed, and to form a first treated solution by vaporizing a certain amount of the water, a high soluble salt remover connected to the first distiller to remove the high soluble salts from the first treated solution, a second distiller connected to the high soluble salt remover to form a second treated solution by vaporizing the water from the first treated solution from which the high soluble salts are removed, and a recovery unit connected to the second distiller to recover the second treated solution.

Systems and methods are disclosed to perform semiconductor processing with a process chamber; a flash lamp adapted to be repetitively triggered; and a controller coupled to the control input of the flash lamp to trigger the flash lamp. The system can deploy a solid state plasma source in parallel with the flash lamp in wafer processing.

Systems and methods are disclosed to perform semiconductor processing with a process chamber; a flash lamp adapted to be repetitively triggered; and a controller coupled to the control input of the flash lamp to trigger the flash lamp. The system can deploy a solid state plasma source in parallel with the flash lamp in wafer processing.

An optoelectronic device is formed having a sandwich structure, which consists of an inorganic semiconductor layer, an organic semiconductor layer, and another inorganic semiconductor layer, where both of the two inorganic semiconductor layers are produced by a solution process.