The invention discloses a piezoelectric heterogeneous substrate, a preparation method and a
semiconductor device, the piezoelectric heterogeneous substrate comprises a substrate layer, a
dielectric layer, a patterned
electrode layer and a piezoelectric film layer, the
dielectric layer is located between the substrate layer and the piezoelectric film layer, the patterned
electrode layer is located in the
dielectric layer, and one side of the patterned
electrode layer is exposed to the
dielectric layer and is electrically connected with the piezoelectric film layer; the piezoelectric thin film layer is provided with a first surface and a second surface which are deviated from each other, the first surface is an original exposed surface of the piezoelectric heterogeneous substrate for forming the piezoelectric thin film layer, the first surface is positioned on one side, deviated from the substrate layer, of the piezoelectric thin film layer, and the second surface is formed by
thinning one side, deviated from the original exposed surface, of the piezoelectric
wafer substrate. The sacrificial protection structure is adopted to form the piezoelectric thin film layer, a high-temperature process is completed before the patterned electrode layer and the
dielectric layer are formed, stress caused by thermal mismatch in the subsequent preparation process is reduced, and the morphology accuracy, reliability, stability and durability of the piezoelectric heterogeneous substrate are improved.