The invention discloses an
oxide thin-film
transistor with a bottom-gate structure and a manufacturing method of the
oxide thin-film
transistor. According to the manufacturing method, the
oxide thin-film
transistor comprises a substrate, a gate
electrode, a gate insulating layer, an
active layer, a
hydrogen permeation layer, an
etching barrier layer, a source
electrode and a drain
electrode; the gate electrode is formed on the substrate; the gate insulating layer is formed on the gate electrode and the substrate, and the gate electrode is covered with the gate insulating layer; the
active layer is formed by an
oxide semiconductor on the gate insulating layer, the
active layer comprises a source region, a drain region and a channel region corresponding to the gate electrode, and the source region and the drain region are doped with
hydrogen ions; the
hydrogen permeation layer is formed on the active layer and used for controlling the number of the hydrogen ions doped with the source region and the drain region; the
etching barrier layer is formed at the position, corresponding to the gate electrode, of the
hydrogen permeation layer, and is used for preventing the hydrogen ions from entering the channel region; the source electrode and the drain electrode are electrically connected to the active layer. According to the scheme of the oxide thin-film transistor with the bottom-gate structure and the manufacturing method of the oxide thin-film transistor, the
hydrogen permeation layer is arranged, as a result, it is guaranteed that the channel region can be formed, and then it is guaranteed that a TFT device is effective.