An object of the present invention is to provide a high-purity Ru
alloy target for
sputtering and its manufacturing method, which are capable of reducing harmful substances as much as possible, refining the
crystal grains as much as possible so as to make the film thickness distribution during deposition to be uniform, and preventing deterioration in adhesiveness with an
Si substrate, and which are suitable in forming a
capacitor electrode material of a
semiconductor memory, as well as a high-purity Ru
alloy sputtered film obtained by
sputtering this Ru
alloy target.In order to achieve the foregoing object, the present invention provides a high-purity Ru alloy target, wherein the content of the
platinum group elements excluding Ru is 15 to 200 and remnants are Ru and inevitable impurities. Also, provided is the manufacturing method of a high-purity Ru alloy target, wherein the content of
platinum group elements excluding Ru is 15 to 200 wtppm and remnants are Ru and inevitable impurities, including the steps of mixing Ru
powder having a purity level of 99.9% or higher and
powder of
platinum group elements excluding Ru, performing press molding the mixed
powder to obtain a compact, performing
electron beam melting to the compact to obtain an
ingot, and performing
forge processing to the
ingot to obtain a target.