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69results about How to "Harmful substance" patented technology

Graphene adsorbing material, preparation method therefor and application thereof, and cigarette filter tip and cigarette

ActiveUS20180228209A1Not affecting smoking taste of smokeReduce harmGas treatmentCigar manufactureFiberHazardous substance
A graphene adsorbing material, a preparation method therefor and application thereof, and a cigarette filter tip and a cigarette are provided. The graphene adsorbing material comprises a fiber carrier, graphene and doped elements wherein the graphene and the doped elements are loaded on the fiber carrier and the doped elements comprise at least one of Al, Si and Fe. The graphene adsorbing material is obtained by contacting the fibers with the graphene material to load the graphene material on the fibers. By introducing the graphene and the doped elements in the fiber carrier, harmful substances with a type of fused aromatic hydrocarbons such as benzopyrene in smoke can be specifically adsorbed, filtered and removed; while nicotine and the other harmless substances are retained, and thus the smoking taste of a cigarette is not affected. The cigarette filter tip can effectively adsorb cancerogenic substances with a type of fused aromatic hydrocarbons such as benzopyrene in smoke to reduce harm of smoking; meanwhile, the pleasure of smoking and the mellow taste of the smoke are not affected. Besides, the graphene adsorbing material can also prevent the phenomenon that a cigarette holder gets mildewed due to humid environment and the other factors.
Owner:JINAN SHENGQUAN GROUP SHARE HLDG

High-Purity Ru Alloy Target, Process for Producing the Same, and Sputtered Film

ActiveUS20090280025A1Preventing deterioration in adhesivenessGood effectCellsVacuum evaporation coatingElectronImpurity
An object of the present invention is to provide a high-purity Ru alloy target for sputtering and its manufacturing method, which are capable of reducing harmful substances as much as possible, refining the crystal grains as much as possible so as to make the film thickness distribution during deposition to be uniform, and preventing deterioration in adhesiveness with an Si substrate, and which are suitable in forming a capacitor electrode material of a semiconductor memory, as well as a high-purity Ru alloy sputtered film obtained by sputtering this Ru alloy target.In order to achieve the foregoing object, the present invention provides a high-purity Ru alloy target, wherein the content of the platinum group elements excluding Ru is 15 to 200 and remnants are Ru and inevitable impurities. Also, provided is the manufacturing method of a high-purity Ru alloy target, wherein the content of platinum group elements excluding Ru is 15 to 200 wtppm and remnants are Ru and inevitable impurities, including the steps of mixing Ru powder having a purity level of 99.9% or higher and powder of platinum group elements excluding Ru, performing press molding the mixed powder to obtain a compact, performing electron beam melting to the compact to obtain an ingot, and performing forge processing to the ingot to obtain a target.
Owner:JX NIPPON MINING & METALS CO LTD
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