6results about How to "Large control area" patented technology

This invention provides a method for forming a vertical transfer transistor, comprising: at least a portion of the gate of the vertical transfer transistor being C-shaped, the gate surrounding an active region, and a photodiode being connected to a floating diffusion region through the active region to form a readout channel for the photodiode. In this solution, designing the gate of the vertical transfer transistor as C-shaped increases the control area of ​​the readout channel from the photodiode to the floating diffusion region, thereby improving the control capability of the vertical transfer transistor and increasing its readout efficiency.

The present application discloses an array substrate and a preparation method thereof, and a display device, wherein the array substrate comprises: a substrate; an active layer, which is arranged on one side of the substrate; a gate insulating layer, which is arranged on the substrate and covers the active layer; and a gate layer, which is arranged on the side of the gate insulating layer away from the substrate, and is arranged outside the active layer in a wrapped shape, and is located on the side of the active layer away from the substrate and on two side surfaces of the side perpendicular to the long extension direction of the active layer. The technical effect of the present application is to increase the gate control area, enhance the gate control capability, weaken the segment channel effect, reduce the parasitic capacitance, and increase the on-state current.

The embodiment of the invention provides a die bonding method using a wave-shaped fitting wave. The die bonding method comprises the following steps: configuring a first through hole, a second through hole, a third through hole, a first through hole and a second through hole on a die bonding device; the die bonding device sucks the first side, the third side and the fourth side of the wafer or the crystal grain through the first negative pressure, the second negative pressure and the third negative pressure respectively; the die bonding device moves the wafer or the crystal grain to the position above the substrate; the die bonding device blows and acts on the first side of the wafer or the crystal grain by means of the first positive pressure, the first side of the wafer or the crystal grain deflects and deforms to be in contact with the substrate, and a bonding wave is formed; and closing the first negative pressure, the second negative pressure and the third negative pressure in sequence from the first side of the die bonding device to the second side of the die bonding device, and simultaneously providing the second positive pressure in sequence from the first side of the die bonding device to the second side of the die bonding device.

The utility model discloses a combined type riot steel fork, including fork rod and U -shaped prong, be equipped with with setting on the hook lock bottom seat of the hook lock on the U -shaped prong is adapted eccentric hook lock, the hook lock bottom seat is welded on the U -shaped prong, and the hook lock bottom seat is welded on the steel pipe of the anti -cutting capture net. The utility model discloses increased control area, flexible capture net, can ensure the safety of the capture object and form more effective resistant distance and area, and the capture net can form 1.5 square meters control range, and once forms control, is not easy to be shaken off.

The invention provides a display panel and a display device. According to the display panel, a first metal layer comprises a drain electrode, a doping part penetrates through a first via hole to be connected with the drain electrode, so that the display panel can adopt the same metal layer to form an electrode and a shading pattern, the number of mask plates is reduced, a buffer layer comprises a special-shaped part, and a channel part is arranged on one plane of the special-shaped part and the side wall of the special-shaped part, so that the thickness of the buffer layer is reduced. The grid electrode is arranged corresponding to the side wall of the channel part and the top surface of the channel part, so that the length of the channel can be increased, the length of the part, opposite to the channel, of the grid electrode can be increased, the grid electrode control area is increased, the grid electrode width can be correspondingly reduced, the size of a single thin film transistor is reduced, and the pixel density is improved.

The utility model provides an intelligent infrared remote control device, and belongs to the technical field of infrared remote control. The intelligent infrared remote control device comprises an assembly table and a remote control device body, the top end of the assembly table is rotationally connected with a rotating disc, the remote control device body is fixedly installed at the top end of the rotating disc, a driving mechanism is arranged on one side of the assembly table, and the driving mechanism comprises a servo motor, a worm and a worm gear. The worm is rotationally connected to the interior of the assembling table, the worm gear is arranged at one end of the rotating disc in a sleeving mode, the worm gear is meshed with the worm, a servo motor is installed on one side of the outer wall of the assembling table, the output end of the servo motor is in transmission connection with one end of the worm, a main controller is arranged in the remote control device body, and the main controller is in transmission connection with the worm. The main controller is electrically connected with a receiving module, a position module, a direction adjusting module and a transmitting module.