A 
system for forming high quality 
silicon material, e.g., polysilicon. In a specific embodiment, the melted material comprises a 
silicon material and an 
impurity, e.g., phosphorous species. The 
system includes a 
crucible having an interior region. In a specific embodiment, the 
crucible is made of a suitable material such as a 
quartz material or others. The 
quartz material is capable of withstanding a temperature of at least 1400 Degrees Celsius for 
processing silicon. In a specific embodiment, the 
crucible is configured in an upright position and has an open region to 
expose a melted material. In a specific embodiment, the present 
system has an 
energy source. Such 
energy source may be an arc heater or other suitable heating device, including multiple heating devices, which may be the same or different. The arc heater is configured above the open region and spaced by a gap between the exposed melted material and a 
muzzle region of the arc heater to cause formation of a determined temperature profile within a vicinity of a center region of the exposed melted material while maintaining outer regions of the melted material at a temperature below a 
melting point of the 
quartz material of the crucible. In a specific embodiment, the system produces a melted material comprising a resulting phosphorous species of 0.1 ppm and less, which is purified silicon.