2results about How to "Reduce connection points" patented technology

The utility model discloses two -way three -way solenoid valve of integrated one -way valve component, including first valve body and second valve body, and first valve body includes import, export and valve cavity, is equipped with first valve port in the valve cavity, second valve body includes on -off module, and on -off module includes electromagnetic assembly and one -way valve component, wherein, electromagnetic assembly includes electromagnetic coil, core pipe and magnetic core, and electromagnetic assembly on -off electricity control first valve port's opening and closing, and one -way valve component includes valve sleeve and check piece, and the one -way flow channel is arranged between valve sleeve exhaust port and exhaust port, and check piece sets up in one -way flow channel, and according to the pressure in -line of one -way flow channel, exhaust port is conducted or closed. The utility model discloses two -way three -way solenoid valve, integrated electromagnetic assembly and one -way valve component, through above -mentioned electromagnetic force drive, mechanical limit and the synergies of fluid pressure balance, realize the accurate control and prevent reverse flow of water flow and steam path.

The present application relates to a method and device for filling redundant metal in a chip, a chip and a semiconductor device. The method comprises: dividing each metal layer of a chip comprising a plurality of metal layers into a plurality of regions; selecting, from the plurality of regions of each metal layer, a region requiring addition of redundant metal as a to-be-filled region based on a layout of each metal layer after routing; determining whether each to-be-filled region of an adjacent metal layer overlaps in a thickness direction of the metal layer; in response to no overlap, performing interdigital redundant metal filling on the to-be-filled region of each metal layer respectively; in response to an overlap, connecting the to-be-filled regions of adjacent layers by a via, and performing interdigital redundant metal filling on one of the plurality of to-be-filled regions having the overlap, and performing floating metal filling on the remaining to-be-filled regions of the plurality of to-be-filled regions having the overlap. The present application significantly improves the capacitance value and the utilization rate of redundant metal in a limited space.