43results about How to "Reduce beam divergence" patented technology

A lighting apparatus for providing illumination, comprising: a) an array of surface-emitting light sources, wherein each surface-emitting light source directs a source illumination beam, over a beam angle θ, toward an illumination plane; b) an array of beam spreading optical elements corresponding with the array of surface-emitting light sources, wherein refraction of the source illumination beam by each beam spreading optical element substantially satisfies a distribution function:

dy/dθ=ƒ(θ)

wherein y is a radial distance along the illumination plane from the optical axis of the beam-spreading optical element, dy is an arbitrarily small increment of the radial distance, dθ is the angular increment of the beam angle corresponding to dy, and ƒ(θ) is the distribution function for the angular distribution of the light source, such that each beam spreading optical element adjusts the luminous intensity of the source illumination beam from the corresponding surface-emitting light source to provide a uniformized illumination beam directed toward the illumination plane; and, c) an array of beam-divergence reducing lens elements, wherein each beam-divergence reducing lens element reduces the angular divergence of a corresponding uniformized illumination beam, providing illumination having improved uniformity and reduced beam divergence thereby.

The invention discloses an LED condensing lens which is a round table type lens, wherein the rear end surface of the round table type lens is provided with a first cylindrical refraction groove, the front end surface of the round table type lens is provided with a second cylindrical refraction groove, the outside wall of the round table type lens is a fully reflecting surface, and the groove walls of the first cylindrical refraction groove and the second cylindrical refraction groove form a refraction surface. The invention provides the LED condensing lens which can form even and round spots and has the advantages of small beam divergence angles, high light condensation and high light efficiency.

The invention relates to a DFB laser diode having a lateral coupling, which comprises at least one semi-conductor substrate (10), at least one active layer (40) that is arranged on the semiconductor substrate, at least one ridge (70) that is arranged above the active layer (40), at least one periodic surface structure (110) that is arranged next to the ridge (70) above the active layer (40) and at least one wave guide layer (30, 50) comprising a thickness ≧1 μm that is arranged below and/or above the active layer.

The invention relates to an anti-dazzle principle based design method for traffic engineering facilities at a road tunnel exit. The method is characterized in that tunnel exit anti-dazzle facilities are arranged in front of the tunnel exit to ease intensive brightness transition caused by insufficient illuminating lamps at the tunnel exit; coloured painting materials of which reflection coefficients gradually reduce are arranged on the tunnel ceiling, side walls and roads from the top down to ease brightness transition and beam divergence at the tunnel exit, so as to lift the dazzle area, reduce the dazzle area below the visual line of a driver and increase the visual adaptation time; horizontal road direction lines and road lane keeping lines are arranged on the road, and side wall vertical direction lines and side wall double-layered contour marks are arranged on the side walls, so as to form a closed mid-frequency retroreflective information stream together; high-frequency red and white marked lines arranged on maintenance road edges and road side reflective raised route markers form a high frequency visual information stream to increase the driver's instantaneous velocity sensation, and promote the driver's speed feeling and distance feeling, and accordingly, the coordination and unification of the tunnel lighting energy conservation and tunnel traffic safety are realized.

Disclosed herein is an apparatus for generating a parallel beam with a high flux. The apparatus of the present invention includes a light source, a first mirror and a second mirror. The light source is positioned at a first focal point of a first ellipse. The first mirror is positioned on the first ellipse to reflect a beam emitted by the light source, and concavely shaped to conform to a section of the first ellipse. The second mirror is positioned across a path of the beam reflected by the first mirror, and convexly shaped to conform to a section of a second ellipse so that an angle formed by two tangent lines passing through each pair of incident points of neighboring rays incident upon the second mirror, respectively, is half of an angle formed by two tangent lines passing through each pair of incident points of neighboring rays incident upon the first mirror, respectively.

Optical semiconductor light guide device having a low divergence emergent beam, application to Fabry-P+E,acu e+EE rot and distributed feedback lasers. According to the invention, the core of the guide of the device comprises at least one semiconductor layer (8), whose refractive index is higher than that of each of the confinement or cladding layers (4, 6) of the guide and at least one second semiconductor layer (10), whose refractive index is lower than that of each of the confinement or cladding layers or close thereto. Application to optical telecommunications.

A particle beam treatment system having a beam generation unit for generating a beam of charged particles, in particular ions, preferably protons, and having a beam guidance system. The generic beam guidance system takes up less space but can provide comparable or even improved beam properties because, in part, the beam guidance system seen in the direction of the beam of charged particles and behind the beam generation unit has at least one solenoid magnet as a beam shaping unit, and the at least one solenoid magnet of the beam guidance system is a superconducting solenoid magnet.

A gain medium for producing a light emission in a laser. The gain medium comprises a dye-doped polymer nanoparticle matrix having an absolute value of dn/dT less than an absolute value of dn/dT of its dye-doped polymer matrix.

An improved monoblock laser cavity is made by applying circular apodizing coatings to the various components of the monoblock laser. The apodization of the laser cavity faces improves the beam divergence of the laser and thus, increases brightness, by encouraging only the lower order modes to lase.

Spreading of an ion beam when passing through a dipole magnet is reduced or suppressed by electrostatic ion beam confinement which supplements magnetic confinement which may be provided. The magnetic confinement is enhanced by the provision of a magnetic mirror through concentration and localized increase of the dipole field with a concave profile of the pole pieces faces and/or provision of permanent magnets or localized regions of material of increased permeability to form magnetic cusps. Pitch and geometry of convex portions of the pole piece faces are adjusted to increase the mirror ratio and the location of the maximum mirror field relative to the thickness of a graphite or insulating liner which may be employed. Electrostatic confinement elements in the form of negatively charged electrodes and/or electrically isolated electrodes or insulators which assume a negative charge. Ionization of plasma between the pole pieces may be enhanced by application of a VHF/UHF field having a frequency of about 40 MHz to 100 MHZ or higher.

A Soller slit device is provided for collimation of high energy radiation, such as X-ray or EUV radiation, and has a low angle of divergence (less than 0.1°) and a high transmission efficiency (60 to 80% or greater). The Soller slit is made up of multiple blades of low-density material, such as glass, mica, or the like, which are treated to reduce reflectivity. The Soller slit device of the invention advantageously provides an increased peak intensity and decreased peak width in diffraction patterns produced in high energy diffractometry applications, such as X-ray diffractometry.

A solar plant enabling transformation of solar energy exploiting most of the solar spectrum with very efficient yields, including: at least one solar collector including a concentrator, configured to collect and concentrate solar radiation in the concentrator; a solar laser device to transform radiation received from the concentrators into laser radiation; a receiver and/or a solar reactor configured to receive radiation from the laser device and transform it into another form of energy; and can include flexible lightguides or plane mirrors to transport the radiation received from the laser device to the solar reactor and/or receiver, and photovoltaic cells interspersed among the collectors and laser devices to transform the concentrated radiation into electricity and allow radiation not transformed to pass to the laser devices.

An improved monoblock laser cavity is made by elongating the Optical parametric oscillation (OPO) cavity. This can be accomplished by changing the coatings on the OPO material and Q-switch and by elongating the OPO cavity to approximately 2 to 3 times the OPO crystal length. The increase in the length of the OPO cavity will improve the beam divergence of the laser.

The invention discloses a laser lighting lamp. The laser lighting lamp comprises a light-emitting unit, an installation unit used for fixing the light-emitting unit and a cooling unit connected with the light-emitting unit and the installation unit. The light-emitting unit comprises laser sources. The light-emitting unit comprises a cooling shell and a heat conducting piece, wherein the cooling shell is arranged on the periphery of the installation unit and the heat conducting piece is located between the laser sources and the cooling shell. An outgoing beam of the light-emitting unit is emitted out in the axis of the cooling shell. The laser sources are located on the side face, perpendicular to the outgoing beam, of the installation unit. The heat conducting piece is of an L-shaped structure. The laser sources are used as a lighting source, so that the lighting distance and the lighting brightness are greatly improved. Because of the cooling shell arranged on the periphery of the installation unit in a sleeving manner and the L-shaped-structure heat conducting piece located between the laser sources and the cooling shell, heat generated by the laser source can be rapidly conducted outwards to the cooling shell by two edges and are rapidly dissipated, the situation that a local portion is overheated is avoided, and the stability and safety of the product are guaranteed.

The invention provides a low sidelobe vortex beam generating method based on a multi-ring array, and is used for solving the problem that the existing vortex beam generating method suppresses a divergence angle, leading to excessively high sidelobes. The implementation scheme comprises the following steps of determining modal value l generating the vortex beam, a scan parameter Ri(q) of the radiusof the ith annular array, and azimuth excitation Him and position vectors of each of the micro-strip antenna units according to an orbital angular momentum theory; constructing an array factor ci(theta, phi) of the ith annular array by using the determined parameters according to the array antenna theory; constructing a vortex wave pattern function F(theta) according to the principle of electricfield superposition; and determining a scan parameter Ri(q') of the lowest sidelobe power according to F(theta). The low sidelobe vortex beam generating method provided by the invention realizes the generation of low sidelobe vortex beams, enhances the integrity of modal information transmission, improves the communication quality of the orbital angular momentum, and can be used for wireless communication and radar imaging.

A semiconductor laser device incorporates a beam control layer for reducing far field and beam divergence. Within the beam control layer, a physical property of the semiconductor material varies as a function of depth through, the beam control layer, by provision of a first sub-layer in which the property varies gradually from a first level to a second level, and a second sub-layer in which the property varies from said second level to a third level. In the preferred arrangement, the conduction band edge of the semiconductor has a V-shaped profile through the beam control layer.