32results about How to "Reduce manufacturing process complexity" patented technology

The invention belongs to the technical field of microelectronics, and discloses a memristor with a two-dimensional material heterojunction and a preparation method of the memristor. The memristor comprises a substrate, a bottom electrode layer, a two-dimensional material heterojunction layer and a top electrode layer from bottom to top, wherein the two-dimensional material heterojunction layer serves as an intermediate dielectric layer and is of a two-layer laminated structure composed of two different metal sulfur compounds, and each layer in the laminated structure corresponds to one metal sulfur compound. Compared with the prior art, the novel memristor is constructed completely based on a two-dimensional material by improving a key functional layer material adopted by the device, the overall structural design of the device and the like, the traditional MIM structure is overturned, and the memristor has the characteristics of low working voltage, fatigue resistance and cycling stability. In addition, the memristor shows high similarity with synapses in information transmission on the aspect of simulating information transmission of neuron, and has a great application prospect onthe development of brain-like structures in the future.

The invention discloses a method for manufacturing a longitudinal dual-grid MOS component, which comprises the following steps: firstly, an ion implantation technology is adopted on a silicon face at the top layer of a SOI substrate to form an N-P-N structure, wherein an N area is highly doped, and a P area is lowly doped; secondly, an electron beam exposure method and an ICP etching method are adopted to form a longitudinal trench at the position of the interface of the N area and the P area where the N-P-N structure is formed; thirdly, a thermal oxidation technology is adopted to form a layer of silicon oxide on the silicon face at the top layer of the longitudinal trench; fourthly, a low pressure chemical vapor deposition technology is adopted to combine a tetra ethyl ortho silicate TEOS source to be filled with the silicon oxide to the longitudinal trench; fifthly, the photoetching is operated on the surface of the filled silicon oxide, the silicon oxide is corroded and the N area and the P area are exposed; sixthly, metal is evaporated on the surface of the exposed N area and P area, and an electrode is formed through the photoetching corrosion. Through adopting the invention, the high speed information transmission in the optical communication and inside a chip system is realized.

The invention discloses a TSV-based accumulative MOS variable-capacitance diode, which comprises a P-type silicon substrate, wherein a through hole is disposed in the silicon substrate; a metal pillarand a dielectric layer are arranged in the through hole from the inside to the outside; a terminal a extends out of the metal pillar; a P-type doped region is disposed between the dielectric layer close to the end of the through hole and the silicon substrate; and a terminal b extends out of the end surface of the P-type doped region. The invention also discloses a preparation method of the TSV-based accumulative MOS variable-capacitance diode. The TSV-based accumulative MOS variable-capacitance diode has a higher quality factor, lower parasitic resistance, lower phase noise and better tuninglinearity than a planar accumulative MOS variable-capacitance diode.

The invention discloses a manufacturing method for leading-out terminals of a ceramic integrated circuit encapsulation casing and a special lead framework. The special lead framework comprises an outer frame 1 and leads 2, and forms a grid bar structure with a frame, wherein the leads 2 are grid bars; the outer ends of the leads 2 are connected with the outer frame, and the inner ends of the leads 2 are in one-to-one correspondence to bonding pads on a ceramic casing 4; after the inner ends of the leads 2 are connected with the bonding pads, the redundant part of the lead framework is cut and separated; and the inner ends of the leads 2 remain on the bonding pads to form bulges so as to form leading-out terminals. Owing to the structure, convenient and accurate positioning is ensured when the leads 2 are welded with the bonding pads, so that a welding die is simplified; and besides, the outer frame can be utilized to achieve direct rack plating, so that the manufacturing technique complexity of the fine-pitch casing is greatly reduced, the production efficiency is improved and the product yield and quality are improved.

The invention belongs to the technical field of hybrid integrated circuits, and discloses a servo control circuit, a quartz flexible accelerometer based on the servo control circuit and a manufacturing method. The servo control circuit comprises a differential capacitance detector, a current integrator, an RC low-pass filter, a transconductance / compensation amplifier, a resistance-capacitance feedback network and a capacitor; the quartz flexible accelerometer comprises a connection quartz watch head and a servo assembly. The quartz watch head comprises a shell, a pendulous reed, a differentialcapacitance sensor and a torquer are arranged in the shell, the differential capacitance sensor and the torquer are coaxially arranged with the pendulous reed, the servo assembly comprises an outer shell, the outer shell is connected with the shell, a base plate is arranged between the outer shell and the shell, one side of the base plate is connected with the outer shell, and a servo control circuit and a cover plate covering the servo control circuit are arranged on the other side. The shell is provided with a first binding post and a plurality of second binding posts, the first binding post is electroplated with a gold layer, and the first binding post is in bonding connection with a thick film bonding pad connected with the capacitor through gold wires. The defect that an existing quartz flexible accelerometer is poor in anti-interference capacity is overcome, and the measurement precision of the quartz flexible accelerometer is improved.

The present invention relates to a communication antenna. The communication antenna comprises a first radiator and a second radiator. The first radiator includes a first substrate and a first radiation fin arranged on the first substrate; the second radiator includes a second substrate and a second radiation fin arranged on the second substrate; the first radiator has a first feed portion and a second feed portion; the second radiator has a third feed portion and a fourth feed portion; and the first radiator and the second radiator are arranged at the same installation surface, and the radiation surfaces of the first radiation fin and the second radiation fin are planes.

The invention relates to the technical field of ceramic materials, in particular to a porous conductive ceramic material for heating and a preparation method thereof. The porous conductive ceramic material comprises the following raw materials in parts by weight: 5-10 parts of ceramic powder, 1-5 parts of a binder, 0.5-2.5 parts of a pore forming agent, 20-30 parts of conductive bone meal, 5-10 parts of nanometer silicon powder, 10-20 parts of an organic carrier and 1-5 parts of an auxiliary conductive agent. According to the porous conductive ceramic material, the conductive mode of the porous ceramic material is used for replacing the conductive mode that the surface of a traditional ceramic material is coated with electronic paste, and a resistance heating wire or a printing heating circuit does not need to be additionally arranged; and when the porous conductive ceramic material prepared by the invention is used as a heating material of an electronic smoking set, a heating area is large, a heating surface is diversified and controllable, atomization is sufficient, the complex conductive mode of a traditional electronic smoking set heating material is changed, and the complexity of the preparation process of the heating material is reduced.

The invention discloses an optical multiplexer and an optical emitting device, and relates to the field of optical communication. At least one optical combiner capable of combining two light beams into one light beam is used to form a light combining component, and at least two stages of light combining components are formed. The optical multiplexer enables 2N beams of light to be combined into one beam through N-level light combining components, which reduces the packaging volume and packaging loss, and reduces the complexity of the manufacturing process.

The invention provides a visual absolute rotation angle measurement method and device, the device includes a CCD camera and a ring-shaped code disc, the middle part of the code disc is rotated by connecting a rotating shaft; the circular ring of the code disc is uniform There are n co-circular gray marks distributed, and the gray value of each gray mark corresponds to the n-level gray value set at uniform intervals in the gray value range of 0‑255 respectively; the CCD camera is arranged on the code disc Above, make its shooting field of view align with the gray mark, and at any time there is at least one complete gray mark in its shooting field of view. The measuring device of the present invention has absolute positioning capability and at the same time has extremely small rotation angle measurement resolution.

The invention belongs to the field of microelectronic technology, and discloses a two-dimensional material heterojunction memristor and a preparation method thereof. The memristor includes a substrate, a bottom electrode layer, and a two-dimensional material heterojunction layer from bottom to top And the top electrode layer, wherein, the two-dimensional material heterojunction layer is used as the intermediate dielectric layer, which is a two-layer laminated structure composed of two different metal sulfur compounds, and each layer in the laminated structure corresponds to one of the metal sulfur compounds. The present invention improves the key functional layer materials used in the device and the overall structure design of the device. Compared with the prior art, a new type of memristor is constructed entirely based on two-dimensional materials, which subverts the traditional MIM structure and has a lower The working voltage, fatigue resistance and cycle stability characteristics of the memristor; moreover, the memristor shows a high degree of similarity to the synapse transmission information in the simulated neuron transmission information, and has great application in the development of brain-like structures in the future prospect.

The invention discloses a TSV-based accumulation type MOS varactor diode, which includes a P-type silicon substrate, and a through hole is opened on the silicon substrate, and a metal column and a dielectric layer are sequentially arranged in the through hole from the inside to the outside, and the metal column leads out There is a terminal a, a P-type doped region is set between the dielectric layer near the end of the through hole and the silicon substrate, and a terminal b is drawn out from the end surface of the P-type doped region. The invention also discloses a preparation method of the accumulation type MOS varactor diode based on TSV. Compared with the planar accumulation type MOS varactor diode, the accumulation type MOS varactor diode of the present invention has higher quality factor and lower Parasitic resistance, lower phase noise and better tuning linearity.

The invention discloses a method for manufacturing a vertical double-gate MOS device. The method includes: A. forming an N-P-N structure by ion implantation technology on the top silicon surface of an SOI substrate, wherein the N region is highly doped and the P region is low doped; B. Using electron beam exposure and ICP etching methods to form a vertical deep groove at the interface between the N region and the P region of the formed N-P-N structure; C. Using thermal oxidation technology to form a layer of oxidation on the top silicon surface forming the vertical deep groove Silicon; D. Using low-pressure chemical vapor deposition technology combined with tetraethyl orthosilicate TEOS source to fill the vertical deep groove with silicon oxide; E. Perform photolithography on the surface of the filled silicon oxide, and corrode the silicon oxide to expose the N region and the P region ; F, evaporating metal on the surface of the exposed N region and P region, and forming electrodes by photolithography and etching. The invention realizes the high-speed transmission of information in the optical communication and inside the chip system.

The invention relates to a porous conductive ceramic material for heating an electronic cigarette set. 4 HCO 3 Crystal grains are used as raw materials, mixed to obtain mixed powder, pressed and formed, and then sintered at a high temperature of 1500 ° C to obtain a porous conductive ceramic material. Using the porous conductive ceramic material prepared by the present invention as the heating material for electronic smoking sets overcomes the conductive form of the traditional electronic smoking set heating material outsourcing the electronic paste, and prepares a high heating rate, controllable porosity, and relatively high corrosion resistance. High-quality, high hardness and compressive strength porous conductive ceramic material for electronic cigarette heating.

The invention provides a fork arm type electric glass lifter which comprises a movable guide rail, a fixed guide rail, a driving arm, a driven arm, a panel and a driving gear, wherein the driving arm and the driven arm are hinged in an X shape through a hinging piece; the driving arm is hinged with the panel and comprises a first long arm, a second long arm and a first spring; two ends of the first spring are respectively connected with the first long arm and the second long arm; the driven arm comprises a first short arm, a second short arm and a second spring; and two ends of the second spring are respectively connected with the first short arm and the second short arm. According to the fork arm type electric glass lifter disclosed by the invention, the movable arms and the springs are additionally arranged, so that the extension of the driving arm and the driven arm is realized. In the process that an automobile window is opened or closed, the driving arm and the driven arm of the fork arm type electric glass lifter disclosed by the invention are automatically adjusted in length simultaneously along with the vertical motion and the centre-of-gravity shift of automobile window glass, and thus no inclination of the automobile window glass is ensured and the driving safety is improved.

A two-dimensional turbulence sensor having an orthogonal cantilever beam structure, comprising a probe (1), a sheath (2), a front beam (3), a first sensitive element (4), a conversion connector (5), a rear beam (6), a second sensitive element (7), a rear seat (8), a sealing rod (9), and a conditioning circuit (10); the probe is mounted at the front end of the sheath, the front beam is mounted inside a front section of the sheath (2), the front beam is vertically placed, and the first sensitive element is mounted on the front beam; the front end face of the conversion connector is provided with a vertical notch (5a), a tail part of the front beam is inserted into the vertical notch, the rear end face of the conversion connector is provided with a horizontal notch (5b) in the horizontal direction, a head part of the rear beam is inserted into the horizontal notch, and the second sensitive element is mounted on the rear beam; the front beam and the rear beam are distributed in an orthogonally perpendicular manner in space to form a cantilever beam structure; and both the first sensitive element and the second sensitive element are connected to the conditioning circuit. The sensor achieves high-resolution observation of two-dimensional physical properties and spatial features of turbulence, and is able to provide a highly reliable detection means for research such as a formation and disappearance mechanism and a trajectory of motion of micro-scale turbulence.

The invention belongs to the technical field of spiral transporting equipment, and discloses an intermediate support connector transition structure of a pipe spiral conveyer. The intermediate supportconnector transition structure comprises a spiral transporting outer pipe, a spiral winding channel and an intermediate support connector which is arranged on the spiral transporting outer pipe and isconnected with a rotating shaft of the spiral winding channel; the spiral transporting outer pipe where the intermediate support connector is arranged is a transition outer pipe; the spiral transporting outer pipe where the intermediate support connector is not arranged is a transporting outer pipe; and the diameter of the transition outer pipe is greater than that of the transporting outer pipe.Compared with the prior art, the intermediate support connector transition structure disclosed by the invention increases the diameter of a pipe section at the arranged position of the intermediate support connector, the space allowing materials to pass is enlarged, materials can smoothly pass through the position, and the risk of plugging cannot be generated; and the transition outer pipe and the transporting outer pipe are independently arranged and connected, so that the complexity of whole manufacturing process of the spiral transporting outer pipe is greatly reduced, and the mounting, disassembling, repairing and maintenance of the intermediate support connector are facilitated.

The invention provides a display device, a display panel and a preparation method of the display panel. The display panel comprises an array substrate, an opposite substrate opposite to the array substrate, a color resistance layer, a plurality of first touch electrodes and a plurality of second touch electrodes, wherein the array substrate comprises a plurality of sub-pixel regions, and each sub-pixel region comprises one or more TFTs (thin film transistors); the color resistance layer is arranged on the array substrate, is located between the array substrate and the opposite substrate and comprises a plurality of color resistance blocks, and each color resistance block is correspondingly located in one sub-pixel region; the plurality of first touch electrodes are arranged on the array substrate and located between the array substrate and the opposite substrate; the plurality of second touch electrodes are arranged on the side, deviated from the array substrate, of the opposite substrate. The preparation cost of the display panel provided by the invention can be reduced.

The invention belongs to the technical field of hybrid integrated circuits and discloses a servo control circuit and a quartz flexible accelerometer based on it and a manufacturing method. The servo control circuit includes a differential capacitance detector, a current integrator, and an RC low-pass filter , transconductance / compensation amplifier, resistance-capacitance feedback network and capacitance; the quartz flexible accelerometer includes connecting the quartz meter head and the servo assembly; the quartz meter head includes a shell, a pendulum piece and a coaxial differential capacitance sensor and Torque, the servo assembly includes a shell, the shell is connected to the shell, a substrate is arranged between the shell and the shell, one side of the substrate is connected to the shell, and the other side is provided with a servo control circuit and a cover plate covering the outside of the servo control circuit; the shell A first binding post and a plurality of second binding posts are arranged on it, a gold layer is electroplated on the first binding post, and the first binding post is connected to the thick-film pad connected to the capacitor through gold wire bonding. The shortcoming of poor anti-interference ability of the existing quartz flexible accelerometer is solved, and the measurement accuracy of the quartz flexible accelerometer is improved.