45results about How to "Avoid extensive cracking" patented technology

An about ⅝ inch to ¾ inch thick low weight, low density gypsum panel with fire resistance capabilities sufficient to provide a Thermal Insulation Index of at least 17.0 minutes which when subjected to U419 test procedures will not fail for at least 30 minutes and, in selected embodiments, also has outstanding water resistance properties.

The present invention provides a synthetic fiber and methods for its use and formation. The present invention may comprise a fiber component that is a twisted bundle comprised of multiple strands of a nonfibrillating monofilament, the degree of twist being greater than about 0.9 turns/inch (about 0.36 turns/cm). The present invention may further comprise another fiber component, discrete from the twisted fiber component, that is fibrillated.

The invention discloses a method for explosion and leakage increase of a low permeability sandstone uranium deposit, which includes steps as follows: A. blast holes are drilled through the overburden, the top rock of occurrence terrane to the proper position of the occurrence terrane from surface. An underreamer is used to locally ream the blast holes at the occurrence terrane to meet charging requirement; B. blasting cartridges are arranged in the blast holes in an uncoupling way; the detonator is waterproof; uncoupling charge for explosion comprises radial uncoupling charge and axial uncoupling charge; C. after the blasting cartridges are arranged properly, hole seal measures shall be taken to build up the blast holes; D. the blasting cartridges are initiated through short delay blasting which comprises short delay blasting inside the blast holes and short delay blasting between the blast holes. The recovery factor and the yield per unit of in-situ Uranium leaching are improved; the uranium deposit resource of low permeability sandstone type is used completely, thus alleviating the shortages of uranium resources.

The present disclosure relates to the field of additive manufacturing and superalloys, particularly to a method for eliminating cracks in René 104 nickel-based superalloy prepared by laser additive manufacturing. For solving the problem that cracks are easily generated during laser additive manufacturing of René 104 nickel-based superalloy with high content of Al and Ti (Al+Ti>5 wt. %), generation of large-size cracks inside a fabricated part is suppressed by means of designing laser forming parameters and a partition scanning strategy; then stress relief annealing is performed to completely eliminate residual stress inside the fabricated part; and a spark plasma sintering process is performed to eliminate cracks inside the fabricated part and suppress the growth of grains during the sintering process.

The invention relates to a continuous high-energy gas fracturing and penetration increasing method for an in-situ leachable ore layer and a special high-energy gas generator and belongs to the technical field of improving penetrability of an ore-bearing terrane. In the continuous high-energy gas fracturing and penetration increasing method for the in-situ leachable ore layer, the high-energy gas generator is transported to the ore-bearing terrane through cable for a producing well to ignite a deflagration shell in the high-energy gas generator; and continuous high-energy gas acts on the ore-bearing terrane and discharges pressure for the ore layer in order that high-energy gas, a gas-water mixture and groundwater form rapid seepage under the action of hydraulic gradient produced instantaneously, thereby completing continuous high-energy gas fracturing and penetration increasing. The high-energy gas generator for the method is characterized in that the structure of the generator comprises: a connecting pipe is sequentially connected with a plugging device, an upper buffer, a time delay igniter, the deflagration shell, a lower buffer and a head tip from top to bottom. The method can improve the permeability of the in-situ leachable ore layer, further improve the mining yield and unit output of situ leaching and mining and improve the utilization efficiency of resource of the in-situ leachable ore layer.

A nitride semiconductor device includes a GaN substrate having a single-crystal GaN layer at least on its surface and plurality of device-forming layers made of nitride semiconductor. The device-forming layer contacting the GaN substrate has a coefficient of thermal expansion smaller than that of GaN, so that a compressive strain is applied to the device-forming layer. This result in prevention of crack forming in the device-forming layers, and a lifetime characteristics of the nitride semiconductor device is improved.

The invention relates to a preparation method of a nano gradient magnesium alloy, and belongs to the technical field of high-strength magnesium alloy preparation. The method comprises the steps of: carrying out homogenization treatment on a semi-continuous casting blank and then extruding the semi-continuous casting blank into a bar, wherein the extrusion temperature ranges from 430 DEG C to 480 DEG C, the extrusion ratio ranges from 13:1 to 16:1; and firstly, carrying out peak aging treatment on an extruded alloy, carrying out heat preservation for 16-20 h at the temperature of 225 DEG C, and then carrying out surface mechanical grinding treatment SMAT at the room temperature to prepare a disc-shaped nano gradient magnesium alloy plate with the thickness ranging from 2.5 mm to 5 mm and the diameter of 49 mm, wherein the total grinding time ranges from 60 min to 120 min. According to the preparation method, the alloy strength is effectively improved, and good strength and plasticity combination is obtained.

This invention provides a method for manufacturing porous oxide electrode layer, comprising: preparing an electrode slurry containing an electrically conductive oxide material powder, a dispersant, water and a moisture agent; spin coating the electrode slurry on a surface of a thin electrolyte or a porous substrate and simultaneously controlling the thickness and uniformity of the electrode layer on the fine electrolyte or the porous substrate; and calcining the electrode layer on the fine electrolyte or the porous substrate to form a porous electrode.

The preferable method of manufacturing the EL panel comprises a panel precursor formation step of forming a panel precursor comprising a substrate, a sealing plate disposed facing the substrate, an EL device (EL device portion) provided on a surface of the substrate facing the sealing plate, and a sealant comprising a curable adhesive composition filled between the substrate and the sealing plate; a first curing step of irradiating the sealant with light so as to partially cure the curable adhesive composition; and a second curing step of heating the sealant after the irradiation with the light so as to further cure the curable adhesive composition.

A method for manufacturing a dielectric thin film capacitor of the present invention includes the steps of coating a liquid raw material on a substrate and performing a first heat treatment to form an adhesive layer, forming a lower electrode on the adhesive layer, coating a liquid raw material on the lower electrode and performing a second heat treatment to form a dielectric thin film by crystallization, forming an upper electrode on the dielectric thin film, and performing a third heat treatment at a temperature higher than those of the first and second heat treatments. The adhesive layer and the dielectric thin film are formed by using materials having the same composition system or using the same material.

A circumferential portion of an epitaxial wafer is removed to remove an anomalously grown elevated portion formed in a circumferential chamfer. An epitaxial layer in the circumferential portion is removed with a width q=t to 5t wherein t is the thickness of the epitaxial layer so that the surface of a substrate is exposed. Therefore, cracking of the epitaxial layer in processing steps can be prevented.

The invention provides a concrete structure of which at least a part has been formed by slip forming with panels inside the slip form, the panels facing the slip form.

The invention provides a post-cast strip blocking brick structure and a construction method thereof. The structure comprises I partition bricks, a water stop steel plate, a supporting rib, upper faceribs and bottom face ribs. Each I partition brick is in an I shape, wherein the bottom face is a plane, the top face is provided with a longitudinal groove and transverse grooves, and the longitudinalgroove communicates with the transverse grooves. The grooves are used for containing the upper and bottom face ribs. The bottom faces of the two I partition bricks are stacked vertically to form a supporting pillar structure, and the water stop steel plate is arranged between the two I partition bricks. The water stop steel plate is perpendicularly connected to the supporting rib which is vertically arranged. The upper face ribs are arranged in the grooves of the upper I partition brick, and the bottom face ribs are arranged in the grooves of the lower I partition brick. The I partition bricks a plate and post-cast strip interface, and the water stop steel plate extends into a post-cast strip from a plate. The structure is firm and high in stability, and construction time can be greatly shortened. The invention further provides a construction method of the above post-cast strip blocking brick structure, and the construction quality and the construction efficiency are greatly improved.

A method for manufacturing a ceramic luminescence conversion element includes providing a shaped body having a first main surface, a second main surface and a first lateral surface. The shaped body includes a ceramic material and a luminescence conversion substance. The first main surface and/or the second main surface of the shaped body is/are machined using a patterning method, so that at least one first machined area and at least one unmachined area are formed. The first machined area extends essentially parallel to the first lateral surface. Singularization is performed to produce a plurality of luminescence conversion elements by means of cuts that are made in the machined main surface of the machined shaped body essentially at right angles to the first lateral surface.

A conductive sintered compact for fixing electrodes inside an electronic device envelope is provided. The sintered compact is made of a conductive composition calcined. The conductive composition includes at least 10 vol % to 60 vol % of Ag particles, a low melting-point glass containing 10 vol % to 80 vol % of B₂O₃, 0 vol % to 70 vol % of ceramic particles, and a metal oxide series pigment. The total amount of the ceramic particles and the metal oxide series pigment is at least 10 vol % or more.

A cast-iron friction member is manufactured by: performing a nitrocarburizing treatment on a cast workpiece at a treatment temperature of 500° C. to 600° C. to thus form a nitrogen compound layer on a surface of the workpiece; and exposing the workpiece to an atmosphere when a temperature becomes 400° C. to 480° C. after the nitrocarburizing treatment so as to cool the workpiece to a room temperature while keeping a contact state with oxygen to thus form an iron oxide layer including Fe₃O₄ on a surface of the nitrogen compound layer.