The invention relates to the technical field of
semiconductor measurement, in particular to a 3D NAND measurement
system and method, in an existing CD-SAXS measurement light path, a
phase grating used for enhancing a scattering
signal of a memory hole structure and a
phase grating used for enhancing a scattering
signal of a deep groove structure are designed on the basis of a
Talbot effect or a fractional
Talbot effect, and according to the measurement requirement, the
phase grating used for enhancing the scattering
signal of the memory hole structure and the phase
grating used for enhancing the scattering signal of the deep groove structure are designed. A switching device is used for controlling and switching gratings in a measuring light path, detection light is modulated through a phase
grating, the
light intensity distribution of the detection light irradiated to a sample is in a light and dark stripe shape related to the
grating structure period and duty ratio, then the bright stripes are aligned with an area needing to be detected according to an alignment mechanism, and the detection
light intensity is adjusted. Dark fringes are aligned with areas needing to be filtered, so that separation and extraction of scattering signals of a memory hole structure and scattering signals of a deep groove structure are enhanced, and mutual interference of the two scattering signals is avoided.