36 results about "Growth suppression" patented technology

Disclosed are a novel tactic acid bacterium, Lactobacillus sakei Probio-65, and the use thereof. The L. sakei Probio-65 strain has acid tolerance, bile acid tolerance and antibiotic resistance, inhibits the growth of harmful pathogenic microorganisms in the body and the intestine of animals, and has immunuenhancing activity. In particular, the novel strain inhibits the growth of Staphylocccus aureus, which is known to be a factor aggravating atopic dermatitis. Thus, the novel strain is useful for preventing or treating atopic dermatitis and allergy-related disorders. Also, the novel strain stabilizes intestinal microflors by inhibiting the abnormal proliferation of harmful microorganisms in the intestine. The L. sakei Probio-65 strain or a culture thereof is useful in pharmaceutical, feed, food, and cosmetic compositions.

A semiconductor laser, a semiconductor device and a nitride series III-V group compound substrate capable of obtaining a crystal growth layer with less fluctuation of the crystallographic axes and capable of improving the device characteristics, as well as a manufacturing method therefor are provided. The semiconductor laser comprises, on one surface of a substrate used for growing, a plurality of spaced apart seed crystal layers and an n-side contact layer having a lateral growing region which is grown on the basis of the plurality of seed crystal layers. The seed crystal layer is formed in that a product of width w1 (unit: μm) at the boundary thereof relative to the n-side contact layer along the arranging direction A and a thickness t1 (unit: μm) along the direction of laminating the n-side contact layer is 15 or less. This can decrease the fluctuation of the crystallographic axes in the n-side contact layer. Accordingly, crystallinity of the semiconductor layer including from n-type clad layer to a p-side contact layer laminated on the n-side contact layer is improved. A semiconductor laser and a semiconductor device capable of decreasing dislocation density and improving device characteristics, as well as a manufacturing method therefor are provided. A semiconductor layer comprising a nitride series III-V group compound semiconductor is laminated on a substrate 11 comprising an n-type GaN. Protruded seed crystal portions are formed and a growth suppression layer having an opening corresponding to the seed crystal portion is disposed to the substrate. The semiconductor layer grows on the basis of the seed crystal portion and has a lateral growing region of low dislocation density. When a current injection region is disposed corresponding to the lateral growing region, the light emission efficiency can be improved. Further, when the growth suppression layer is provided with a function of reflecting or absorbing light generated in the semiconductor layer, it is possible to prevent leakage of light or intrusion of stray light from the substrate to suppress generation of noises.

At least one method, apparatus and system disclosed herein for suppressing over-growth of epitaxial layer formed on fins of fin field effect transistor (finFET) to prevent shorts between fins of separate finFET devices. A set of fins of a first transistor is formed. The set of fins comprises a first outer fin, an inner fin, and a second outer fin. An oxide deposition process is performed for depositing an oxide material upon the set of fins. A first recess process is performed for removing a portion of oxide material. This leaves a portion of the oxide material remaining on the inside walls of the first and second outer fins. A spacer nitride deposition process is performed. A spacer nitride removal process is performed, leaving spacer nitride material at the outer walls of the first and second outer fins. A second recess process is performed for removing the oxide material from the inside walls of the first and second outer fins. An epitaxial layer deposition processed upon the set of fins. A portion of the lateral over-growth of epitaxial layer on the outer walls of the first and second outer fins is suppressed by the spacer nitride material.

The present invention is to improve yield and reliability in a wiring step of a semiconductor device. When an Al wiring on an upper layer is connected through an connection pillar onto an Al wiring on a lower layer embedded in a groove formed on an interlayer insulation film, a growth suppression film having an opening whose width is wider than that of the Al wiring is formed on the interlayer insulation film and the Al wiring. In this condition, Al and the like are grown by a selective CVD method and the like. Accordingly, the connection pillar is formed on the Al wiring within the opening, in a self-matching manner with respect to the Al wiring.

A heat treatment jig for a semiconductor silicon substrate making contact with a semiconductor silicon substrate to hold the substrate is to be mounted on a heat treatment boat in a vertical heat treatment furnace. The jig has a ring structure or a disc structure, with a thickness of 1.5mm or more but not more than 6.0mm and a flexure displacement quantity of 100mum or less in an area making contact with the semiconductor silicon substrate when mounted on the heat treatment boat. An outer diameter of the jig making contact with the semiconductor silicon substrate to hold the substrate is 65% or more of a diameter of the semiconductor silicon substrate, a surface roughness (Ra value) of a plane making contact with the semiconductor silicon substrate is 1.0mum or more but not more than 100mum. The heat treatment jig effectively reduces slipping, and at the same time, prevents growth suppression of a thermally oxidized film on a substrate rear plane, and eliminates a front plane step, which causes defocusing in a photolithography process in device manufacture. Thus, a high quality of the semiconductor silicon substrate can be maintained and device yield can be remarkably improved.

The present disclosure provides a method of culturing mammalian cells, e.g., by perfusion cell culture, expressing a heterologous protein in a cell culture, comprising culturing mammalian cells expressing a heterologous protein in a culture medium comprising an effective amount of one or more lipids or lipid metabolites selected from the group consisting of: linoleic acid, arachidonic acid, and prostaglandin E2, or derivatives and / or precursors thereof. The lipids or lipid metabolites or combinations thereof can lead to growth suppression and / or increased productivity with reduced cell bleed.The present disclosure also provides methods for increasing the productivity of a cell culture by culturing the cells in a culture medium comprising an effective amount of one or more lipids or lipidmetabolites selected from the group consisting of: linoleic acid, arachidonic acid, and prostaglandin E2, or derivatives and / or precursors thereof. The present disclosure also provides culture mediumfor use in producing therapeutic proteins with increased productivity, wherein the medium comprises one or more lipids or lipid metabolites selected from the group consisting of: linoleic acid, arachidonic acid, and prostaglandin E2, or derivatives and / or precursors thereof.

It is intended to provide a phytotoxicity controlling agent usable as a herbicide for upland farming, which exerts a sufficient herbicidal effect on weeds growing together with upland crops, for example, wheat, rye, barley, oat, corn, sorghum, cotton, soybean, adzuki bean, oilseed rape, beet, upland rice and so on but causes no phytotoxic phenomenon (for example, growth inhibition, growth suppression, tiller inhibition or yellowing) in cultivated plants, comprising a nuclear-substituted benzoic acid represented by the following general formula:wherein R1 represents linear or branched C4-15 alkyl; a salt thereof or an alkyl ester thereof.

At least one method, apparatus and system disclosed herein for suppressing over-growth of epitaxial layer formed on fins of fin field effect transistor (finFET) to prevent shorts between fins of separate finFET devices. A set of fins of a first transistor is formed. The set of fins comprises a first outer fin, an inner fin, and a second outer fin. An oxide deposition process is performed for depositing an oxide material upon the set of fins. A first recess process is performed for removing a portion of oxide material. This leaves a portion of the oxide material remaining on the inside walls of the first and second outer fins. A spacer nitride deposition process is performed. A spacer nitride removal process is performed, leaving spacer nitride material at the outer walls of the first and second outer fins. A second recess process is performed for removing the oxide material from the inside walls of the first and second outer fins. An epitaxial layer deposition processed upon the set of fins. A portion of the lateral over-growth of epitaxial layer on the outer walls of the first and second outer fins is suppressed by the spacer nitride material.