A
semiconductor laser, a
semiconductor device and a
nitride series III-V group compound substrate capable of obtaining a
crystal growth layer with less fluctuation of the crystallographic axes and capable of improving the device characteristics, as well as a manufacturing method therefor are provided. The
semiconductor laser comprises, on one surface of a substrate used for growing, a plurality of spaced apart
seed crystal layers and an n-side
contact layer having a lateral
growing region which is grown on the basis of the plurality of
seed crystal layers. The
seed crystal layer is formed in that a product of width w1 (unit: μm) at the boundary thereof relative to the n-side
contact layer along the arranging direction A and a thickness t1 (unit: μm) along the direction of laminating the n-side
contact layer is 15 or less. This can decrease the fluctuation of the crystallographic axes in the n-side contact layer. Accordingly,
crystallinity of the semiconductor layer including from n-type clad layer to a p-side contact layer laminated on the n-side contact layer is improved. A semiconductor
laser and a
semiconductor device capable of decreasing
dislocation density and improving device characteristics, as well as a manufacturing method therefor are provided. A semiconductor layer comprising a
nitride series III-V group
compound semiconductor is laminated on a substrate 11 comprising an n-type GaN. Protruded seed
crystal portions are formed and a
growth suppression layer having an opening corresponding to the seed
crystal portion is disposed to the substrate. The semiconductor layer grows on the basis of the seed crystal portion and has a lateral
growing region of low
dislocation density. When a current injection region is disposed corresponding to the lateral
growing region, the
light emission efficiency can be improved. Further, when the
growth suppression layer is provided with a function of reflecting or absorbing light generated in the semiconductor layer, it is possible to prevent leakage of light or intrusion of
stray light from the substrate to suppress generation of noises.