The invention discloses a PINN-based large
numerical aperture photoetching objective lens vector
diffraction field calculation method, which comprises the following steps: obtaining a three-dimensional vector
diffraction light field of a large NA photoetching objective lens through
simulation, reconstructing the three-dimensional vector
diffraction light field at a sampling point position, and generating corresponding complex
electric field distribution matrix data; performing physical purification on the complex
electric field distribution matrix data to construct a corresponding
data set; constructing a corresponding
Helmholtz equation as a constraint equation based on the
light field tight focusing characteristic of the large NA photoetching objective lens; constructing an initial model, and training the initial model by using the
data set in combination with the constraint equation to obtain a PINN model for predicting complex
electric field data; and inputting space coordinates of a to-be-predicted target into the PINN model to obtain complex electric
field data. According to the method provided by the invention, the calculation efficiency of the vector diffraction field can be remarkably improved on the premise of keeping relatively high
simulation precision, and the method is suitable for rapid modeling and analysis of the three-dimensional vector light field of the large-numerical-aperture photoetching object mirror.