The invention relates to the technical field of
microelectronics, in particular to a high-frequency acoustic
resonator and a
communication device. The high-frequency acoustic
resonator comprises a supporting substrate, a bottom
electrode, a piezoelectric film and a top
electrode which are sequentially arranged in a stacked mode from bottom to top, the top
electrode comprises an
interdigital transducer, the
interdigital transducer at least comprises an interdigital
electrode pair and a
bus bar, the normal direction of the interdigital
electrode pair serves as the first direction, the electrode extending direction of the interdigital
electrode pair serves as the second direction, and the
bus bar is arranged in the first direction. The normal direction of the surface of the piezoelectric film is a third direction, setting the relative relationship of three volume wave sound velocities of the supporting substrate according to the
relative magnitude of
kinetic energy corresponding to polarization components of the target mode in three directions, and setting the relationship between the sound velocity of the target mode and the sound velocity of the supporting substrate, therefore, the
sound wave in the target mode is restrained on the surface of the supporting substrate, so that a higher Q value and a higher target mode cutoff sound velocity can be realized on the premise that the slow shear wave sound velocity of the supporting substrate is the same, and the photoetching requirement is reduced.