34results about How to "Eliminate sharp corners" patented technology

The invention provides an anti-dazzle processing method for an electronic product glass display screen and belongs to the technical field of display screen processing technology. The anti-dazzle processing method includes rinsing and dedusting the glass display screen in a rinsing tank and subjecting the rinsed and dedusted glass display screen to ultrasonic cleaning in an ultrasonic cleaner; sticking corrosion-resistant plastic protective films on four side faces and the back face of the glass display screen; heating frosting liquid to 20-26 DEG C, and soaking the glass display screen in the heated frosting liquid for 60-120 seconds; removing the protective films on the glass display screen; filling a jetting machine with a polishing solution, fixing the glass display screen, and jetting the polishing solution to the front face of the glass display screen through a spray head of the jetting machine for 180-300 seconds. The anti-dazzle processing method for the electronic product glass display screen has the advantages that the anti-dazzle processing method solves the technical problems of poor surface quality, bad hand feeling, weak anti-dazzle capability and the like of anti-dazzle glass manufactured by an existing anti-dazzle processing method for the display screen; microcosmic sharp corners are eliminated by means of adopting a unique high-pressure jetting and polishing mode, so that anti-dazzle capability is improved.

The invention discloses a trapezoidal wave zone plate with a quasi-single-stage focusing characteristic. The trapezoidal wave zone plate comprises a light-proof substrate and a plurality of ring-shaped wave zones which are sequentially arranged from inside to outside by taking the substrate as a center, wherein each ring-shaped wave zone comprises at least two spiral trapezoidal hole light transmission units which are formed by twisting isosceles-trapezoid-shaped hole light transmission units, and are sequentially connected; the radial light transmittance of the wave zone plate meets a formula shown in the description. Compared with a common Fresnel wave zone plate, the trapezoidal wave zone plate can restrain the diffraction efficiency of a senior focus very well, also can reduce the peak strength of the senior focus. Moreover, when a ratio of the top edge of the original trapezoid to the bottom edge of the original trapezoid is equal to 1 to 5, the trapezoidal wave zone plate further has the effect of eliminating a 3n-level focus, and also restrains the efficiency of a 5-level focus to 0.16% of a 1-level focus (insulating efficiency being 6.93%). Compared with a Gabor wave zone plate, the 1-level focus efficiency is higher than the focusing efficiency of the Gabor wave zone plate, and the trapezoidal wave zone plate is easier to manufacture in comparison with a plurality of binaryzation Gabor wave zone plates.

The invention discloses a floating gate structure and a manufacturing method thereof. The method comprises the steps of providing a substrate which comprises a first part and a second part, performing well injection on the substrate, continuously forming a gate oxide layer, then forming a plurality of first polycrystalline silicon structures, forming shallow grooves in the substrate between the adjacent first polycrystalline silicon structures, forming shallow groove isolation, depositing a second polycrystalline silicon layer on the first polycrystalline silicon structures and the shallow groove isolation on the first part, etching the second polycrystalline silicon layer, forming second polycrystalline silicon structures, exposing partial shallow groove isolation, and allowing side walls of the second polycrystalline silicon structures on the two sides of the exposed partial shallow groove isolation to be smooth. The method saves a photomask, simplifies a technology, and achieves perfect alignment of floating gate polycrystalline silicon and an active region. An application of a floating gate polycrystalline silicon side wall technique meets a control gate and floating gate coupling requirement, eliminates a sharp corner, and facilitates storing charge in floating gate polycrystalline silicon.

The invention discloses a method for eliminating a shaft corner at the top end of a groove. The method comprises the steps of 1, enabling oxide-nitride-oxide (ONO) to grow, 2, enabling the ONO to be etched, 3, enabling the groove to be etched, wherein the ONO serves as hard mask for dry etching, 4, enabling middle silicon nitride of the hard mask to be etched by a transverse wet method, wherein the sharp corner at the top end of the groove is required to be exposed completely, 5, enabling top layer oxidation film remained on the hard mask to be etched in a complete mode, and meanwhile enabling bottom oxidation film of the hard mask to be etched in transverse mode, 6, conducting homodromous etching at the bottom of the groove, and meanwhile conducting transverse etching and vertical etching for the sharp corner at the top end of the groove so as to reduce the sharp corner at the top end, 7, enabling a sacrificed oxide layer to grow inside the groove, enabling the sharp corner at the top end of the groove to be completely oxidized and to be disappeared, 8, enabling the sacrificed oxide layer to be etched in the wet method, enabling the silicon nitride to be etched in the wet manner, and keeping part of the silicon nitride serving as a barrier layer for helix destabilizing protein (HDP) chemical mechanical lapping. According to the method for eliminating the shaft corner at the top end of the groove, the sharp corner at the top end of the groove can be eliminated, and the fact that trailing HDP can fill the groove without holes is guaranteed.

The invention provides a method for preventing cavities from generating in deep groove insulation technology, which comprises the following steps: forming an source region protective layer on a semiconductor substrate; etching the source region protective layer and the semiconductor substrate to form a deep groove; etching the source region protective layer and the semiconductor substrate to form a shallow groove communicated with the deep groove; adopting a high temperature oxidation technology on the edge of the deep groove and the edge of the shallow groove; carrying out etching by the wet method to remove the silicon oxide formed by the high temperature oxidation technology, and precipitating an insulating medium in the deep groove and the shallow groove; carrying out the chemical machinery grinding to flatten the surface of the shallow groove. The method of the invention enables the edges and corners of the grooves to be smooth, thereby avoiding large quantities of cavities in the groove and ensuring the insulating property of the groove.

The invention discloses a method for producing a stainless steel slab by a radian chamfer crystallizer continuous casting machine. The method comprises the steps of molten iron dephosphorization, TSRfurnace smelting, LF refining and continuous casting; and according to the continuous casting process, the radius R of a chamfer arc of a crystallizer is 80-82 degrees, the diameter width of the chamfer arc is 39-40 mm, the flow rate of cooling water in a copper plate water tank of the chamfer crystallizer is 7.9-8.2 m/min, the water quantity of the narrow surface of the chamfer crystallizer is 450-550 L/min, and the water quantity of the wide surface is 3800-4200 L/min. Compared with the prior art, the method adopts molten iron pre-dephosphorization and TSR furnace desulfurization process, the soft blowing and calming time is prolonged by an LF furnace, low oxygen, low phosphorus and low sulfur are realized, and inclusions are controlled; cooling parameters of the crystallizer and a fan-shaped section are designed to adopt a conventional pressing mode and electromagnetic stirring so as to slow down the corner cooling strength of a casting blank and eliminate corner cracks and sharp corners; the edge loss phenomenon of a hemmed part of hot rolled steel is avoided; and therefore, the depth and the width of a slit line of a steel coil product are reduced, the product quality is improved, and the economic benefits are greatly improved.

The invention relates to a chopper structure which comprises a chopper body. The copper body is internally provided with a conical wall of which the central axis is superposed with that of the chopper body, wherein the conical wall is next to the end of the copper body, an inner chamber wall which is coaxially arranged with the conical wall, and a first arc-shaped transition wall which is connected with the conical wall and the inner chamber wall. The conical wall, the inner chamber wall and the first arc-shaped transition wall form a wire passing through hole for passing of a solder wire. In a movement process of the solder wire relative to the wire passing through hole, because the first arc-shaped transition wall is connected between the conical wall and the inner chamber wall, a closed angle at a connection part between the conical wall and the inner chamber wall is eliminated, and smooth transition of the connection between the conical wall and the inner chamber wall is realized, thereby effectively preventing scratch of the closed angle to the surface of the solder wire, ensuring high mechanical strength of the solder wire, realizing no easy pulling breakage or fatigue breakage of the solder wire by an external impact force or an alternate stress, and ensuring high soldering quality of the solder wire.

The invention provides a process integration method for improving a flash memory unit. The method comprises steps that a substrate structure is formed through device ion implantation; a flash memory oxide layer, a floating gate polysilicon layer and a silicon nitride layer are sequentially deposited; a shallow trench isolation structure is formed, and a silicon oxide layer is deposited on the shallow trench isolation structure; pre-cleaning processing is carried out, the silicon nitride layer and the silicon oxide layer of the shallow trench isolation structure are partially removed through etching to expose a floating gate polysilicon tip; the exposed floating gate polysilicon tip is oxidized to round the tip; etching processing is carried out, the silicon oxide layer of the shallow trench isolation structure is partially removed, and the silicon oxide for rounding the floating gate polysilicon tip is further removed; the silicon nitride layer is removed through etching till the floating gate polysilicon layer is exposed. The method is advantaged in that arcing of the floating gate tip is realized in advance through the added silicon oxide, arcing of the floating gate tip and thenon-damaged flash memory unit at the top portion of the floating gate are realized, and another optimization method is provided for continuously reducing the flash memory unit.

The invention discloses a triple screw for correcting tooth profiles through arcs. The triple screw comprises two double-end driven screw bodies and a double-end driving screw body. The driving screw body is located in the middle, and the driven screw bodies are symmetrically arranged along the circumference of the driving screw body. Each tooth profile of each driven screw body is composed of the transition arc, a long-amplitude epicycloid, a tooth root circle and a tooth crest circle. Each tooth profile of the driving screw body is composed of an arc envelope line, a tooth crest circle and a tooth root circle. The design range of the radius of the transition arc in each tooth profile of each driven screw body is ro/dj, and the value ranges from 0.015 to 0.025. According to the triple screw for correcting the tooth profiles through the arcs, smoothness is achieved in the engagement process, wear resistance of the driven screw bodies is remarkably improved, the work life of a screw pair is prolonged by about 30% to 40%, and the stable volume efficiency is kept. In addition, when a disc milling cutter or a grinding wheel machines the driving screw body, the service life of the cutter is prolonged by about 50%, and the machining difficulty is reduced.

The invention provides a wet flue gas desulfurization absorption tower, including a tower body, a tower top welded with a peak of the tower body, a purified flue gas outlet lateral plate welded with a lateral part of the tower body, an outlet roof and an outlet soleplate welded with a lateral plate, a purified flue gas outlet consists of the outlet lateral plate, the outlet roof and the outlet soleplate, the outlet roof is welded with the tower top; the outlet soleplate is welded with the tower body by a cambered connecting piece; a cross section of the cambered adapting piece is a part of a circle. As the holistic cambered connecting piece is adopted to be connected with the flue gas outlet soleplate and the absorption tower wall, the taper angle and the acute angle at a joint are eliminated, reduces overflowing phenomenon of high speed flue gas is reduced, and the service life of a lining is prolonged; workload of manufacturing and welding with subsections is lowered by a holistic cambered pipe, thus construction is easy.

The invention discloses a printed circuit board heat exchanger core for reducing stress. The printed circuit board heat exchanger core comprises a plurality of hot plates with hot fluid channels and cold plates with cold fluid channels, wherein the upper surfaces and the lower surfaces of the hot plate sheets and the cold plate sheets are respectively provided with a surface A with a semi-arc anda plane B with a semi-arc, and the surface A with the semi-arc and the surface A with the semi-arc are symmetrically connected to form a circular section channel; and the planes B are connected to form a wall surface between the cold fluid channel and the hot fluid channel. The stress borne by the core body can be greatly reduced, the size of the core body can also be reduced, the structure of theheat exchanger is more compact, and higher pressure and higher temperature can be borne.

The invention discloses a gear modification method for reducing gear micro-pitting. Through the first stage of modification, the smooth transition of the initial modification area can be realized, and the formation of micro-pitting in the alternate meshing area of ​​single and double teeth can be reduced; The two-stage modification can realize the smooth transition of tooth top meshing and reduce the formation of micropitting in the meshing and meshing areas. The present invention can realize the parametric control of the modification curve by changing different modification parameters, which not only retains the advantage of straight line modification to remove more material, but also can realize the transition area between the involute and the modification curve and the modification curve and the tooth top Smooth transitions in circular transition areas. Through the selection of appropriate modification parameters, the pressure distribution characteristics during the tooth contact process can be well improved, and the service life and reliability of the gear can be improved.

The invention discloses an umbilical cable filling structure optimization method. The method comprises: establishing a geometric model of an umbilical cable according to a filling shape of the umbilical cable, setting a pressure threshold value borne by each filling edge, simulating a stress characteristic of a filling component, and meanwhile, carrying out fixed constraint on each end point to limit translation and rotation in a model plane; carrying out topological optimization on the filling structure by adopting a variable density method; taking the density of each unit as a topological design variable, taking static flexibility minimization as a target function and a constraint function, selecting a volume fraction upper limit, setting an upper limit initial value, then carrying out optimization iterative calculation, adjusting the volume fraction upper limit according to a calculation result, and recalculating according to an adjusted numerical value to obtain an optimized structure; and carrying out curve fitting on the optimized structure, specifically, removing sharp corners and interrupted parts with small loads on the outer boundary according to the stress characteristics of the component, and fitting sawtooth-shaped boundaries in the structure to be smooth.

The embodiment of the invention provides a lane line smoothing method and system, and the method comprises the steps: reading generated lane line data, and determining the positions of sharp corner data points from the lane line data; determining the tangent length from the sharp corner to the arc based on the sharp corner data point position; and performing arc smoothing based on the tangent length from the sharp corner to the arc, and outputting the smoothed data. According to the lane line smoothing method and system, the sharp corner part in the lane line can be eliminated, the lane line feature shape points with good smoothness areobtained, better support is provided for subsequent vehicle guiding, and the method is easy, convenient and rapid to implement, high in robustness, capableof adapting to 2D and 3D lane line shape point data and capable of adapting to sharp corner scenes of various distances.