3results about How to "Small distribution" patented technology

Provided is a gallium oxide-based semiconductor substrate configured to allow the formation, by HVPE, of a gallium oxide-based epitaxial film having a small film thickness distribution, a small donor concentration distribution, and a low crystal defect density. Also provided are a semiconductor wafer including the semiconductor substrate and the epitaxial film, and a method for manufacturing the semiconductor wafer. As one embodiment, provided is a semiconductor substrate 10 in which at least one main surface thereof is a crystal growth base surface 11. The semiconductor substrate 10 comprises a single crystal of a gallium oxide-based semiconductor. The growth base surface 11 is the (001) plane. In a continuous region of 70 area% or more of the growth base surface 11, the off angle in the [010] direction is in the range from greater than -0.3° to -0.01°, or in the range from 0.01° to smaller than 0.3°. In said region of the growth base surface 11, the off angle in the [001] direction is in the range from -1° to 1°. The diameter of the semiconductor substrate 10 is 2 inches or more.

The invention discloses a ship floating state measuring method. A plurality of measuring points fixed with reflective targets are arranged on outer plates of a ship bow and a ship stern in sequence; when the ship is balanced, a datum line parallel to the center line of the ship body is drawn on the dock wall or the ground of the wharf; the method comprises the following steps: arranging two total stations respectively corresponding to a bow and a stern on the ground of a dock wall or a wharf, and establishing a space coordinate system; the total station is used for measuring and recording the distances between all measuring points on the bow and stern sides and the datum line in the Y-axis direction and the Z-axis direction when the ship is in a balanced state; when the floating state of the ship changes, the two total stations start to measure the distances between all measuring points on the bow and stern sides and the datum line in the Y-axis direction and the Z-axis direction in real time, and the current floating state of the ship is analyzed; and judging whether the current working condition operation needs to be stopped and measures are taken to adjust the floating state. The ship floating state measuring method is wide in application range, easy to operate and high in practical application error-tolerant rate, and the feasibility of measuring the ship floating state by the total station is improved.

The application belongs to the technical field of sodium ion batteries, and discloses a preparation method of a double-site co-doped sodium ion battery positive electrode material. The method comprises the following steps: (1) according to the molar ratio of each metal element in the chemical formula of the target product, corresponding metal salts are weighed and dissolved in an ethanol solution to obtain a metal salt solution; oxalic acid is dissolved in an ethanol solution to obtain an oxalic acid solution; (2) under ultrasonic conditions, the metal salt solution is added dropwise into the oxalic acid solution, and stirring is continuously performed; after the metal salt solution is completely added dropwise, ultrasonic treatment is continuously performed; the suspension treated by ultrasonic treatment is placed in an oven for drying, and the powder obtained by drying is ground; (3) the ground powder is placed in a corundum box and then placed in a tube furnace for sintering; first, heating is performed to 500 DEG C for heat preservation; after cooling, the tablet is taken out, the pressed tablet is continuously placed in the tube furnace, heating is performed to 900 DEG C for heat preservation, after cooling, the tablet is taken out and ground, and the target product is obtained.