2results about How to "Small distribution" patented technology

Provided is a gallium oxide-based semiconductor substrate configured to allow the formation, by HVPE, of a gallium oxide-based epitaxial film having a small film thickness distribution, a small donor concentration distribution, and a low crystal defect density. Also provided are a semiconductor wafer including the semiconductor substrate and the epitaxial film, and a method for manufacturing the semiconductor wafer. As one embodiment, provided is a semiconductor substrate 10 in which at least one main surface thereof is a crystal growth base surface 11. The semiconductor substrate 10 comprises a single crystal of a gallium oxide-based semiconductor. The growth base surface 11 is the (001) plane. In a continuous region of 70 area% or more of the growth base surface 11, the off angle in the [010] direction is in the range from greater than -0.3° to -0.01°, or in the range from 0.01° to smaller than 0.3°. In said region of the growth base surface 11, the off angle in the [001] direction is in the range from -1° to 1°. The diameter of the semiconductor substrate 10 is 2 inches or more.

The application belongs to the technical field of sodium ion batteries, and discloses a preparation method of a double-site co-doped sodium ion battery positive electrode material. The method comprises the following steps: (1) according to the molar ratio of each metal element in the chemical formula of the target product, corresponding metal salts are weighed and dissolved in an ethanol solution to obtain a metal salt solution; oxalic acid is dissolved in an ethanol solution to obtain an oxalic acid solution; (2) under ultrasonic conditions, the metal salt solution is added dropwise into the oxalic acid solution, and stirring is continuously performed; after the metal salt solution is completely added dropwise, ultrasonic treatment is continuously performed; the suspension treated by ultrasonic treatment is placed in an oven for drying, and the powder obtained by drying is ground; (3) the ground powder is placed in a corundum box and then placed in a tube furnace for sintering; first, heating is performed to 500 DEG C for heat preservation; after cooling, the tablet is taken out, the pressed tablet is continuously placed in the tube furnace, heating is performed to 900 DEG C for heat preservation, after cooling, the tablet is taken out and ground, and the target product is obtained.