50results about How to "Addressing Insufficient Selectivity" patented technology

The present invention discloses an electrode structure of a light emitted diode and manufacturing method of the electrodes. After formed a pn junction of a light emitted diode on a substrate, a layer of SiO2 is deposited on the periphery of the die of the LED near the scribe line of the wafer, then a transparent conductive layer is deposited blanketly, then a layer of gold or AuGe etc. is formed with an opening on the center of the die. After forming alloy with the semiconductor by heat treatment to form ohmic contact, a strip of aluminum (Al) is formed on one side of the die on the front side for wire bonding and to be the positive electrode of the LED. The negative electrode is formed on the substrate by metal contact. Another form of the electrode structure of the present invention is making both the positive and negative electrodes on the front side of the LED by etching the p-type semiconductor of the pn junction and forming a strip of negative electrode on the n-type semiconductor, the positive electrode is formed on the p-type semiconductor.

A membrane is used in combination with fractionation and hydrodesulfurization to reduce the sulfur content of hydrocarbon feeds, preferably sulfur-containing naphtha feeds. A membrane separation zone is employed to treat a fraction of effluent from a fractionation zone containing sulfur-containing non-aromatic hydrocarbons to produce a sulfur rich permeate and sulfur deficient retentate. The sulfur rich permeate and a second fraction of the fractionation zone, which contains sulfur-containing aromatic hydrocarbons, are further treated in a hydrodesulfurization zone. The stream from the hydrodesulfurization zone and the sulfur deficient retentate from the membrane separation zone are then processed as low sulfur hydrocarbon streams, especially those streams being processed in the manufacture of gasoline when the initial hydrocarbon stream is naphtha from a fluidized catalytic cracking unit.

The filtering membranes of the present invention are made from a pair of polymer films stretched in a liquid surface-active medium for the formation of crazes filled with the aforementioned medium. The crazed films are perforated and then stack together in a stretched or released state and are welded together into a sealed structure with a plurality of parallel welding seams arranged, e.g., in mutually perpendicular directions, so that a plurality of sealed cells is formed. The cells have on one side of the membrane input openings and on the other side output openings. If an input opening is in one cell, then an output opening is in the adjacent cell. Adjacent cells are interconnected only through the welding seams. Welding can be carried out by contact heating or with the use of a laser beam, or the like. The material of the welding seam has an amorphous structure. The substance captured inside the crazes may comprise a dispersion medium used for fixing dimensions of the crazes or a substance for treating the fluid being filtered. In operation, the medium to be filtered diffuses from the input cells to the output cells of the membrane through the material of the welding seams. Filtering is enhanced if the material of the seams has aforementioned crazes. In such a membrane, the total length of the welding seams on the area of 1 m<2 >may reach several hundred thousand meters. The membrane possesses selectivity sufficient for separation of two or multiple-component mixtures in a single-stage process. Depending on the method used for preparation of the polymer-film surface prior to welding, the membrane filter may have efficiency from 5 to 40,000 kg / m<2>xD.

Interconnect structures possessing an organosilicate glass interlayer dielectric material with minimal stoichiometeric modification and optionally an intact organic adhesion promoter for use in semiconductor devices are provided herein. The interconnect structure is capable of delivering improved device performance, functionality and reliability owing to the reduced effective dielectric constant of the stack compared with that of those conventionally employed because of the use of a sacrificial polymeric material deposited onto the dielectric and optional organic adhesion promoter during the barrier open step done prior to ashing the patterning material. This sacrificial film protects the dielectric and optional organic adhesion promoter from modification / consumption during the subsequent ashing step during which the polymeric film is removed.

A spectrometer assembly is provided having an optical transmission filter including a stack of continuous, non-patterned alternating dielectric and metal layers. Angle-dependent transmission wavelength shift of the optical transmission filter with continuous metal layers is small e.g. in comparison with multilayer dielectric filters, facilitating size reduction of the spectrometer assembly.

A spectrometer assembly is provided having an optical transmission filter including a stack of continuous, non-patterned alternating dielectric and metal layers. Angle-dependent transmission wavelength shift of the optical transmission filter with continuous metal layers is small e.g. in comparison with multilayer dielectric filters, facilitating size reduction of the spectrometer assembly.

The preceding invention concerns a galvanic bath as well as a method for depositing a zinc-bearing layer onto a substrate surface. According to the invention, it is provided that the galvanic bath be divided into at least two cell chambers, in which the division occurs by means of a cation-exchange membrane and one cell chamber includes an acidic deposition-electrolyte and the other cell chamber includes a neutral or acidic anolyte. The acidic anolyte here is at least partially removed from the cell chamber containing it and is stripped of the foreign metal ions contained in it by means of a cation-exchange arrangement.

A system and methodology for the detection of threat substances is described. The detector system consists of a method to evaporate the sample into a primary separator and thermal release of trapped target materials into a secondary separator like conventional GC. The GC column is thermally ramped to elute all substances and the end of the column terminates into an atmospheric pressure chemical ionization source of an axial ion mobility spectrometer (AIMS). Both polarity ions are pulsed into a single construction separator tube at different timing. Their arrival time is detected on a collector plate, which allows registering their ion mobility spectra of both polarities for a single GC peak.

In a plasma etching method, a substrate, on which an oxide film as a target layer to be etched, a hard mask layer, and a patterned photoresist are sequentially formed, is loaded into the processing chamber and mounted on a lower electrode. A processing gas containing CxFy (x is 3 or less and y is 8 or less), C4F8, a rare gas and O2 is supplied and a plasma of the processing gas is generated by applying a high frequency power to an upper or a lower electrode. Further, a high frequency power for bias is applied to the lower electrode, and a DC voltage is applied to the upper electrode.