3results about How to "Reduce white point" patented technology

The application belongs to the field of polyvinyl chloride functional film materials, and particularly relates to a temperature-variable light-adjusting PVC film with multiple physical barrier functions and a preparation method. The PVC film comprises a PVC continuous phase, temperature-variable light-adjusting functional particles dispersed in the PVC continuous phase, lamellar barrier fillers arranged in the direction of the film surface, and an interface compatible locking component. The temperature-variable light-adjusting functional particles and the lamellar barrier fillers form a spatial coupling structure in the PVC continuous phase, the lamellar barrier fillers constitute in-plane oriented labyrinth diffusion channels, and the interface compatible locking component forms an interface bridging layer between the PVC continuous phase, the temperature-variable light-adjusting functional particles and the lamellar barrier fillers. The application realizes the cooperation of temperature response optical adjustment, lamellar labyrinth barrier and interface migration locking, so that the film material can produce changes in visible light transmittance, haze, color and / or near-infrared transmittance when the temperature changes, and the transmittance or migration of water vapor, oxygen and plasticizers is reduced.

This invention discloses a method for manufacturing shallow trench isolation, comprising: Step 1, performing a first etching process on a semiconductor substrate in the shallow trench formation area using a dry etching process to form a shallow trench; during the first etching, metal ions are precipitated in the dry etching process cavity and deposited on the inner surface of the shallow trench, and the metal ions diffuse and form a contamination layer; Step 2, performing a second etching process on the semiconductor substrate exposed on the inner surface of the shallow trench using a wet etching process to remove the contamination layer on the inner surface of the shallow trench. This invention can remove the metal ions precipitated in the dry etching process cavity and deposited on the inner surface of the shallow trench during the dry etching process, thereby avoiding the impact of metal ions on the yield of products, especially CMOS image sensors.

This invention discloses a method for implementing an image sensor with a switchable lateral overflow integrating capacitor (LOFIC) voltage within a pixel unit. The pixel unit comprises at least one photodiode, a transfer transistor, a floating diffusion region, a reset transistor, a LOFIC, and a voltage switching unit. The photodiode is connected to the floating diffusion region via the transfer transistor. The first electrode of the LOFIC is coupled to the voltage switching unit, which is adapted to switch the first electrode of the LOFIC to different voltages. The voltage of the first electrode of the LOFIC is adjusted by timing control of the voltage switching unit to reduce the dark current of the image sensor and improve image delay.