2results about How to "Reduce white point" patented technology

This invention discloses a method for manufacturing shallow trench isolation, comprising: Step 1, performing a first etching process on a semiconductor substrate in the shallow trench formation area using a dry etching process to form a shallow trench; during the first etching, metal ions are precipitated in the dry etching process cavity and deposited on the inner surface of the shallow trench, and the metal ions diffuse and form a contamination layer; Step 2, performing a second etching process on the semiconductor substrate exposed on the inner surface of the shallow trench using a wet etching process to remove the contamination layer on the inner surface of the shallow trench. This invention can remove the metal ions precipitated in the dry etching process cavity and deposited on the inner surface of the shallow trench during the dry etching process, thereby avoiding the impact of metal ions on the yield of products, especially CMOS image sensors.

This invention discloses a method for implementing an image sensor with a switchable lateral overflow integrating capacitor (LOFIC) voltage within a pixel unit. The pixel unit comprises at least one photodiode, a transfer transistor, a floating diffusion region, a reset transistor, a LOFIC, and a voltage switching unit. The photodiode is connected to the floating diffusion region via the transfer transistor. The first electrode of the LOFIC is coupled to the voltage switching unit, which is adapted to switch the first electrode of the LOFIC to different voltages. The voltage of the first electrode of the LOFIC is adjusted by timing control of the voltage switching unit to reduce the dark current of the image sensor and improve image delay.