The invention discloses an
ion beam
polishing method for coupled
silicon carbide in-situ growth based on
quantum dots, and belongs to the technical field of SiC surface
polishing. The preparation method of the SiC material with the
quantum dot sacrificial layer grown in situ comprises the following steps: mixing a lead source, a cesium source and a
solvent to obtain a CsPbBr3 precursor solution; and dropwise adding the CsPbBr3 precursor solution to the surface of the SiC material, flattening, heating for
crystallization, and annealing to obtain the SiC material with the
quantum dot sacrificial layer grown in situ. According to the
ion beam
polishing method based on
quantum dot coupling silicon carbide in-situ growth, the
quantum dot layer serves as the sacrificial layer of the SiC
wafer, the thickness of the sacrificial layer can be effectively reduced, the flatness of the SiC surface can be remarkably improved, and the good
fluorescence labeling effect can be achieved. The CsPbBr3
quantum dot prepared by the method has extremely small
nano size, can deeply fill
micro cracks and micro-nano scratches on the surface of a SiC
wafer, is completely coupled with the
micro cracks on the surface of the SiC
wafer, and realizes accurate filling of defects.